Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. D. Schrimpf"'
Autor:
R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:363-369
Autor:
M. D. Hu, F. Padgett, M. W. McCurdy, B. D. Sierawski, R. D. Schrimpf, R. A. Reed, M. L. Alles
Publikováno v:
IEEE Transactions on Nuclear Science. 70:410-417
Autor:
Xingji Li, Jianqun Yang, Hugh J. Barnaby, Pengwei Li, Xiangsong Sun, Lei Dong, Kenneth F. Galloway, R. D. Schrimpf, D. M. Fleetwood
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
B. D. White, L. J. Brillson, M. Bataiev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, S. T. Pantelides
Publikováno v:
Journal of Applied Physics. 92:5729-5734
Microcathodoluminescence (CLS) spectroscopy is used to probe the effect of ionizing radiation on defects inside Al gate oxide structures. Micron-scale Al–SiO2–Si capacitors exposed to 10 keV x-ray irradiation exhibit spatially localized CLS emiss
Publikováno v:
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process.
Publikováno v:
Integrated Ferroelectrics. 6:121-128
Lead-Zirconate-Titanate (PZT) capacitors were built and tested. The devices consist of a monolithic Pt back electrode, ferroelectric PZT film deposited by the sol-gel method, a patterned Pt top electrode, and a Spin-On-Glass (SOG) passivation layer t
Autor:
S L, Teich-McGoldrick, M, Bellanger, M, Caussanel, L, Tsetseris, S T, Pantelides, S C, Glotzer, R D, Schrimpf
Publikováno v:
Nano letters. 9(11)
We investigate the feasibility of using CdTe nanotetrapods as circuit elements using models and simulation at multiple scales. Technology computer-aided design tools are used to simulate the electrical behavior for both metal-semiconductor field-effe
Autor:
Stephen J. Pennycook, Leonidas Tsetseris, J. D. Joannopoulos, Matthew H Evans, X.-G. Zhang, Sergey N. Rashkeev, Daniel M. Fleetwood, Zhong-Yi Lu, X.J. Zhou, K. van Benthem, Evgeni Gusev, Sokrates T. Pantelides, R. D. Schrimpf
Publikováno v:
Defects in High-k Gate Dielectric Stacks ISBN: 1402043651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a50b76b8e2573045576bde40ddbaed2
https://doi.org/10.1007/1-4020-4367-8_15
https://doi.org/10.1007/1-4020-4367-8_15
Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation
Autor:
Sorin Cristoloveanu, B. Dufrene, M.M. Mojarradi, R. D. Schrimpf, J.A. Chroboczek, P. Gentil, K. Akarvardar, Benjamin J. Blalock
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
The low noise and radiation-hard operation of the SOI four-gate transistor (G/sup 4/-FET) is experimentally demonstrated. When operated in depletion-all-around (DAA) mode, the G/sup 4/-FET drain current flows in the middle of the silicon film, far fr