Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. D. Maclnnes"'
Autor:
J. Angilello, M. Sampogna, Vlasta Brusic, F. M. d'Heurle, J. J. Dempsey, E. I. Alessandrini, R. D. Maclnnes
Publikováno v:
IBM Journal of Research and Development. 22:647-657
The composition, phase formation, stress, resistivity, and, in particular, the oxidation and corrosion behavior of Cu-Al films with a variety of Cu:Al ratios have been determined. Their relevance to the gas panel is discussed.
Autor:
R. Savoy, C. S. Petersson, J. Angilello, Eugene A. Irene, E. Tierney, François M. d'Heurle, R. D. Maclnnes, A. P. Segmuller, J. E. E. Baglin, F. Cardone, J. J. Dempsey
Publikováno v:
Journal of Electronic Materials. 10:59-93
Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscatter-ing, electron microprobe and electron transmission microsco-py. T
Publikováno v:
IBM Journal of Research and Development. 23:119-127
Vapor deposited aluminum cathodes for parallel plate HeNe lasers have been used with considerable success. It is shown that the aluminum cold cathode is improved by the addition of copper and that other alloying elements of bulk Al 2024 do not contri