Zobrazeno 1 - 10
of 24
pro vyhledávání: '"R. D. Jacowitz"'
Publikováno v:
Journal of Crystal Growth. 128:788-792
A novel solid source metalorganic chemical vapor deposition (MOCVD) process has been used to grow highly textured thin films of CeO2 and MgO, and highly oriented thin films of Sr1-xBaxNb206 (SBN). Both (100)-oriented and (lll)-oriented CeO2 films wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a04041a488ffe8478042ac96afc533
https://doi.org/10.1016/s0022-0248(07)80045-5
https://doi.org/10.1016/s0022-0248(07)80045-5
Autor:
R. Hiskes, Z. Lu, Roger K. Route, Robert S. Feigelson, S.A. DiCarolis, J. L. Young, R. D. Jacowitz
Publikováno v:
Journal of Crystal Growth. 128:781-787
A novel and inexpensive single source metalorganic chemical vapor deposition (MOCVD) reactor has been developed at Hewlett Packard Laboratories, which permits the controlled and reproducible growth of device quality thin film heterostructures on a va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b18067096e2150a0e24d7adda7561ad
https://doi.org/10.1016/s0022-0248(07)80044-3
https://doi.org/10.1016/s0022-0248(07)80044-3
Publikováno v:
Journal of Crystal Growth. 127:560-565
The linearly-graded low-temperature buffer (LGLTB) approach developed by Harmand et al. [1] for growing materials with lattice parameters different from the substrate was extended to thick layers and minority carrier devices, using In x Ga 1- x As al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0386fa8548a4900f79094eb52b12bc2
https://doi.org/10.1016/0022-0248(93)90683-n
https://doi.org/10.1016/0022-0248(93)90683-n
Publikováno v:
Journal of Electronic Materials. 21:817-824
Diodes have been fabricated in layers of Si1−x Ge x and silicon deposited selectively on patterned wafers, and the electrical characteristics of the diodes have been examined. For 50 nm thick Si1−x Ge x layers containing about 22% Ge, the forward
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777f189418e26fbccd6eee4700df86f7
https://doi.org/10.1007/bf02665521
https://doi.org/10.1007/bf02665521
Autor:
R. D. Jacowitz, M. R. Beasley, J. L. Moll, R. C. Taber, T. H. Geballe, Chang-Beom Eom, S. S. Laderman, Ann F. Marshall, T. L. Hylton
Publikováno v:
Physical Review B. 43:2922-2933
The resistive losses near 10 GHz are measured at 4.2 K for ten c-axis-oriented ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ thin films deposited in situ on MgO substrates. The losses range from 16\ifmmode\pm\else\textpm\fi{}3 \ensuremath
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0a8db5dc0febaef9f5c1596fc4959b
https://doi.org/10.1103/physrevb.43.2922
https://doi.org/10.1103/physrevb.43.2922
Autor:
Bruce M. Lairson, K. Yamamoto, J. Z. Sun, Steven M. Anlage, Chang-Beom Eom, John C. Bravman, Stephen K. Streiffer, R. D. Jacowitz, R. C. Taber, T. H. Geballe, S. S. Laderman, Ann F. Marshall
Publikováno v:
Physica C: Superconductivity. 171:354-383
High quality superconducting films of YBa 2 Cu 3 O 7− x were deposited in situ using single target 90° off-axis sputtering. We have investigated their superconducting DC and RF properties, their normal state properties, and their microstructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b923948d97e2a2c097985a9cbcc97d5
https://doi.org/10.1016/0921-4534(90)90153-6
https://doi.org/10.1016/0921-4534(90)90153-6
Publikováno v:
Physical Review B. 41:6564-6574
A directional solidification method for growing large single crystals in the ${\mathrm{Bi}}_{2}$${\mathrm{Sr}}_{2}$${\mathrm{CaCu}}_{2}$${\mathrm{O}}_{8+\mathrm{\ensuremath{\delta}}}$ system is reported. Ion doping, with replacement of La for Sr and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea30b355d4d641354288033d44d19bc
https://doi.org/10.1103/physrevb.41.6564
https://doi.org/10.1103/physrevb.41.6564
Publikováno v:
Applied Physics Letters. 62:612-614
We have investigated boron diffusion in Si and strained Si1−xGex, in situ doped, epitaxial layers. During inert ambient annealing at 860 °C, boron diffusion is observed to be slower in Si0.83Ge0.17 than in Si for boron concentration levels between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841cbf749fefcdec59aea6f1c5b0f682
https://doi.org/10.1063/1.108872
https://doi.org/10.1063/1.108872
Publikováno v:
IEEE Electron Device Letters. 13:177-179
The characteristics of diodes fabricated in thick Si/sub 1-x/Ge/sub x/ layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eecb509473bf73d80fe6dfdbff20d9e
https://doi.org/10.1109/55.145012
https://doi.org/10.1109/55.145012
Publikováno v:
Applied Physics Letters. 60:763-765
Epitaxial thin films of YBa2Cu3O7 (YBCO) have been deposited by off‐axis sputtering onto substrates of r‐plane sapphire coated with a CeO2 diffusion barrier which had been previously deposited by metalorganic chemical vapor deposition process. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8731e307982a362049c83b353545a4
https://doi.org/10.1063/1.106535
https://doi.org/10.1063/1.106535