Zobrazeno 1 - 10
of 57
pro vyhledávání: '"R. D. Barlow"'
Publikováno v:
Surface and Interface Analysis. 21:310-315
We present an analytic form for the response function measured in a SIMS depth profile of an impurity layer less than 1 nm wide (a delta layer). Although the process used to evolve the function can be justified on physical grounds, we make no claim t
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 72:442-446
SIMS response functions and depth resolution parameters have been measured using O 2 + primary ions at normal incidence and 45°, for a range of silicon MBE grown epilayers containing ultrathin buried layers or “deltas” doped with B. Growth and d
Autor:
David Bowen, Evan H. C. Parker, E. Başaran, A.R. Powell, T. Naylor, J. C. Brighten, N. L. Mattey, D. W. Smith, Terry E. Whall, R. D. Barlow, S.M. Newstead, M.G. Dowsett, C. J. Emeleus, C. P. Parry, R. A. Kubiak
Publikováno v:
Journal of Crystal Growth. 111:907-911
This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures in
Autor:
R D, Barlow
Publikováno v:
Materials management in health care. 10(5)
Autor:
R D, Barlow
Publikováno v:
Materials management in health care. 10(4)
Autor:
R D, Barlow
Publikováno v:
Hospital material[dollar sign] management. 17(11)
Autor:
R D, Barlow
Publikováno v:
Hospital material[dollar sign] management. 17(11)
Autor:
R D, Barlow
Publikováno v:
Hospital material[dollar sign] management. 17(10)
Autor:
R d, Barlow
Publikováno v:
Hospital material[dollar sign] management. 17(9)
Autor:
R D, Barlow
Publikováno v:
Hospital material[dollar sign] management. 17(9)