Zobrazeno 1 - 10
of 47
pro vyhledávání: '"R. Czaputa"'
Publikováno v:
Applied Surface Science. 108:273-281
High resolution XPS measurements of porous silicon samples with different preparation histories are presented. Variation of photoelectron take off angle and of flood gun conditions leads to the separation of emission of near surface electrically insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e8fd4a6676d17c79a2a6bbddf535c1
https://doi.org/10.1016/s0169-4332(96)00595-8
https://doi.org/10.1016/s0169-4332(96)00595-8
Publikováno v:
Thin Solid Films. 255:212-215
For nanoporous silicon treated with nitric acid, a remarkable photoluminescence enhancement effect is observed. The enhancement is controlled by irradiation with visible light. Photoluminescence, infrared spectroscopy and electron spin resonance are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a25c4e234efca7753ebbeafe56d9c50c
https://doi.org/10.1016/0040-6090(94)05656-x
https://doi.org/10.1016/0040-6090(94)05656-x
Publikováno v:
ChemInform. 24
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bcfaffc619186a2cd72a8bc4e238eff
https://doi.org/10.1002/chin.199329200
https://doi.org/10.1002/chin.199329200
Publikováno v:
Materials Science Forum. :415-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c630f88b43a0047676cdfaf732122d
https://doi.org/10.4028/www.scientific.net/msf.38-41.415
https://doi.org/10.4028/www.scientific.net/msf.38-41.415
Publikováno v:
MRS Proceedings. 358
We report results of photoluminescence (PL), FTIR and ESR investigations on nanoporous silicon (PS) where a reversible PL intensity relaxation effect in the chemically oxidised material is observed. To be activated the effect needs, however, addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018fb60709af53d8e767598a46b93b2a
https://doi.org/10.1557/proc-358-495
https://doi.org/10.1557/proc-358-495
Publikováno v:
Materials Science and Engineering: B. 4:133-137
Rhodium, which is believed to favour interstitial diffusion in silicon (corresponding to its high diffusivity), forms levels in the upper half of the silicon band gap which are attributed to a substitutional site. Gold in silicon diffuses mainly via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a349546d7d3a0cd6daf7042b686cb318
https://doi.org/10.1016/0921-5107(89)90229-8
https://doi.org/10.1016/0921-5107(89)90229-8
Publikováno v:
Surface Science. 170:386-390
An investigation of “impurity-shifted” intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65f326e78e6e59f0d44236c29289a8a6
https://doi.org/10.1016/0039-6028(86)90991-x
https://doi.org/10.1016/0039-6028(86)90991-x
Autor:
H. Feichtinger, R. Czaputa
Publikováno v:
Physica Status Solidi (a). 79:K143-K146
Comparaison des resultats experimentaux obtenus par les auteurs avec des resultats theoriques ou experimentaux d'autres auteurs; concernant la modification de la structure de bande entrainee par Fe et Cr en position d'interstitiels dans Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a07c5ab9935f43430ef8feb2b48baf
https://doi.org/10.1002/pssa.2210790249
https://doi.org/10.1002/pssa.2210790249
Publikováno v:
Solid State Communications. 47:223-226
Interstitial manganese in silicon can exist in four charge states which imply single acceptor and double donor behaviour. The corresponding level scheme with the acceptor level ( Mn − 0 ) at Ec-0.13eV, the first donor level ( Mn 0 + ) at Ec−0.45e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60088f324e6d379b92c9a5c65f09da06
https://doi.org/10.1016/0038-1098(83)90549-5
https://doi.org/10.1016/0038-1098(83)90549-5
Autor:
R. Czaputa
Publikováno v:
Applied Physics A Solids and Surfaces. 49:431-436
Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba375e24a5197b80a4c2a44b4bebde0b
https://doi.org/10.1007/bf00615028
https://doi.org/10.1007/bf00615028