Zobrazeno 1 - 10
of 23
pro vyhledávání: '"R. Crochemore"'
Autor:
C. Dubarry, L. Arnaud, M. L. Calvo Munoz, G. Mauguen, S. Moreau, R. Crochemore, N. Bresson, B. Aventurier
Publikováno v:
2021 IEEE International 3D Systems Integration Conference (3DIC).
Autor:
M.-C. Cyrille, R. Crochemore, G. Molas, T. Magis, E. Nowak, Jean-Francois Nodin, A. Persico, J. Sandrini, N.-P. Tran, N. Castellani
Publikováno v:
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
978-1-7281-4232-6/20; International audience; HfO$_2$-based OxRAMs with various metal stacks in the inferior VIA of bottom electrode were fabricated. We demonstrated for the first time that the metal stack of TiN PVD (physical vapour deposition), fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09fc1736aaa7d55d3a098eef1c8b36c5
https://hal-cea.archives-ouvertes.fr/cea-03027403/file/EU006.pdf
https://hal-cea.archives-ouvertes.fr/cea-03027403/file/EU006.pdf
Autor:
G. Mauguen, A. Faes, T. Flahaut, Frank Fournel, V. Balan, F. Servant, E. Lagoutte, C. Dubarry, M. Scannell, A. Jouve, K. Rohracher, E. Bourjot, T. Bodner, R. Crochemore, Jens Hofrichter
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Current 3D integrated devices based on copper hybrid bonding are only integrating dual-damascene CMOS processes for interconnection.. In this study, we have developed a Titanium/Oxide (Ti/SiO 2 ) hybrid bonding technology suitable for 200 mm non-copp
Autor:
N.P., Tran, J., Sandrini, A., Persico, J.F., Nodin, T., Magis, R., Crochemore, N., Castellani, M.C., Cyrille, G., Molas, E., Nowak
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3e561dee591beb6086ae69d3715351e0
https://hal-cea.archives-ouvertes.fr/cea-03022902
https://hal-cea.archives-ouvertes.fr/cea-03022902
Autor:
K. Hassan, B. Szelag, L. Adelmini, B. Montmayeul, L. Sanchez, E. Ghegin, P. Rodriguez, S. Bensalem, F. Nemouchi, T. Bria, M. Brihoum, P. Brianceau, E. Vermande, O. Pesenti, A. Schembri, R. Crochemore, S. Dominguez, M.-C. Roure, C. Jany
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
B. Traore, F. Perrin, L. Perniola, Emmanuel Nolot, E. Vianello, Nicolas Vaxelaire, F. Mazen, J. Coignus, Alessandro Grossi, P. Blaise, L. Lachal, S. Bernasconi, S. Pauliac, E. Nowak, S. Chevalliez, J. F. Nodin, R. Crochemore, L. Grenouillet, M. Barlas, C. Pellissier
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A thorough insight of Si implantation in HfU2-based OXRAM is presented, from a material standpoint up to a 4 kbit 1T-1R array. We demonstrate for the first time that local implantation enables switching area localization and significantly decreases f
Autor:
R. Crochemore, O. Pesenti, A. Schembri, S Domínguez, M. Brihoum, Saddek Bensalem, T. Bria, Loic Sanchez, Karim Hassan, Bertrand Szelag, Christophe Jany, Pierre Brianceau, Ph. Rodriguez, M. C. Roure, Laetitia Adelmini, E. Vermande, B. Montmayeul, E. Ghegin, Fabrice Nemouchi
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper we demonstrate the first integration of a hybrid III-V/Si laser in a fully CMOS compatible 200mm technology. Device with SMSR up to 50 dB and a maximum output power of 4mW coupled in the waveguide have been measured. The fabrication flo
Autor:
R. Crochemore, Piero Olivo, Jean-Francois Nodin, L. Perniola, G Cibrario, K. El Hajjam, Etienne Nowak, C. Pellissier, Cristian Zambelli, Alessandro Grossi, S. Bernasconi
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12c4b40072fbd6e8582750cefeedc145
http://hdl.handle.net/11392/2371660
http://hdl.handle.net/11392/2371660
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Akademický článek
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