Zobrazeno 1 - 10
of 20
pro vyhledávání: '"R. Constapel"'
Publikováno v:
Proceedings of the IEEE. 95:438-452
Today's field programmable gate array (FPGA) architectures, like Xilinx's Virtex-II series, enable partial and dynamic run-time self-reconfiguration. This feature allows the substitution of parts of a hardware design implemented on this reconfigurabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74863abcb2794961bf9deb6027c96afa
https://doi.org/10.1109/jproc.2006.888404
https://doi.org/10.1109/jproc.2006.888404
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Lateral 600-V DMOSFETs on SOI (silicon-on-insulator) substrates have been used as test devices to compare conventional oxide passivation with a passivation system consisting of oxide and an additional semiresistive layer (SIPOS or Si/sub x/N/sub y/).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc64c7939cce3dbe74d574e1da83701
https://doi.org/10.1109/ispsd.1993.297123
https://doi.org/10.1109/ispsd.1993.297123
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 60 V quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise ins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ecf9ec3c6660a9754c92bfc7a77ed57
https://doi.org/10.1109/ispsd.1996.509485
https://doi.org/10.1109/ispsd.1996.509485
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 /spl mu/m, 5 /spl mu/m) are presented and discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb41e9f38acd919b162080d16631ebf
https://doi.org/10.1109/ispsd.1994.583671
https://doi.org/10.1109/ispsd.1994.583671
Autor:
J. Korec, R. Constapel
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
The forward blocking characteristics of lateral power devices on SOI-substrate are analyzed using two-dimensional numerical device simulation and compared with measurements of LIGBT and LDMOS devices. The critical influence of different emitter struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350d6f80641bb5b5a5b8e2cf9fa1d276
https://doi.org/10.1109/ispsd.1994.583669
https://doi.org/10.1109/ispsd.1994.583669
Publikováno v:
IEEE International Symposium on Industrial Electronics. Proceedings. ISIE'98 (Cat. No.98TH8357).
Silicon carbide is a semiconductor material with superior properties compared with silicon or gallium arsenide. The main advantages concern high-temperature, high-power, high-frequency, and radiation hardened applications. In the first part of the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a1909db9c60c81939d167b7c820541
https://doi.org/10.1109/isie.1998.707767
https://doi.org/10.1109/isie.1998.707767
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
A novel power device called the CMOS-thyristor-cascode (CTC), compatible with the conventional BCD-MOS process is presented in this paper. The CTC is a thyristor controlled by a CMOS-like transistor pair and offers 30% lower conduction losses and 3.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f65060f290ad08aa6b966051e6f40b
https://doi.org/10.1109/ispsd.1998.702659
https://doi.org/10.1109/ispsd.1998.702659
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
Polysilicon is usually used as a gate material for MOS-gated power devices and can also be used for the fabrication of active components. These components can be integrated on the surface of semiconductor devices, which are dielectrically insulated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78306b61df3a20d758b7b8ccb27832a
https://doi.org/10.1109/ispsd.1998.702719
https://doi.org/10.1109/ispsd.1998.702719
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c40ab404be76250345066b991401db
https://doi.org/10.1109/iedm.1997.650398
https://doi.org/10.1109/iedm.1997.650398
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
A bidirectional lateral base resistance controlled thyristor has been proposed and demonstrated with experiment results, which achieves a symmetrical performance with low conduction-loss. Thanks to its voltage controlled anode-short, an excellent hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a6100462e94a4c8cc3956c55387eef
https://doi.org/10.1109/ispsd.1997.601494
https://doi.org/10.1109/ispsd.1997.601494