Zobrazeno 1 - 10
of 19
pro vyhledávání: '"R. Cipro"'
Autor:
R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sanchez, Z. Ye, X. Y. Bao, J. B. Pin, T. Baron
Publikováno v:
APL Materials, Vol 4, Iss 4, Pp 046101-046101-6 (2016)
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperatu
Externí odkaz:
https://doaj.org/article/b57d9be9181d480fb9c632881acc3157
Autor:
Thierry Baron, Franck Bassani, G. Audoit, V. Gorbenko, Mickael Martin, R. Cipro, S. David, Adeline Grenier, Jean-Paul Barnes, Xinyu Bao
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, Elsevier, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩
Display Omitted Uniform III-V heterostructures selectively grown on non-planar 300mm Si substrate were studied using SIMS.SIMS protocols were developed to obtain 2D depth profiles of III-V materials in 3D architectures.3D reconstructions of individua
Autor:
C. Guedj, Eugénie Martinez, V. Gorbenko, R. Cipro, Jean-Paul Barnes, Thierry Baron, Wael Hourani, Sylvain David, Franck Bassani, J. Moeyaert
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena
Journal of Electron Spectroscopy and Related Phenomena, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. This technique is successfully applied to quantify the elemental composition of planar and patterned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0a85fcc12371887940af9fc8cbb6b3c
https://hal.univ-grenoble-alpes.fr/hal-01881946
https://hal.univ-grenoble-alpes.fr/hal-01881946
Autor:
R. Alcotte, T. Baron, Y. Bogumilowicz, Pascal Pochet, Franck Bassani, R. Cipro, J. Moeyaert, J. B. Pin, Sylvain David, Errol Antonio C. Sanchez, X.Y. Bao, M. Martin, Damien Caliste, T. Cerba, Z. Ye
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (AP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c91c86755b1de6be3fa0de1c4485da5d
https://cea.hal.science/cea-01851579
https://cea.hal.science/cea-01851579
Autor:
Vincent Delaye, François Bertin, Nicolas Bernier, R. Cipro, D. Lafond, Jean-Luc Rouvière, G. Audoit, Mathieu Pierre Vigouroux, Thierry Baron, Mickael Martin, Bernard Chenevier
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
://WOS:000345216100037
Applied Physics Letters, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
Applied Physics Letters, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
International audience; Precession electron diffraction is an efficient technique to measure strain in nanostructures by precessing the electron beam, while maintaining a few nanometre probe size. Here, we show that an advanced diffraction pattern tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::807dabe0203b15295f976acdffc65b66
https://hal.univ-grenoble-alpes.fr/hal-01103079
https://hal.univ-grenoble-alpes.fr/hal-01103079
Autor:
Isabelle Huyet, Cyril Guedj, Jean-Michel Hartmann, R. Cipro, Pascal Besson, Marie-Christine Roure, Mickael Martin, Thomas Signamarcheix, Virginie Loup, Christelle Veytizou, Christophe Figuet, Walter Schwarzenbach, Maurice Rivoire, Catherine Euvrard-Colnat, Anne-Marie Papon, Julien Duvernay, Franck Bassani, J. Widiez, Daniel Delprat, Thierry Baron, Aurélien Seignard, Yann Bogumilowicz, Frédéric Gonzatti, E. Augendre, Sébastien Sollier, Frederic Mazen
Publikováno v:
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
Bulk silicon device technologies are reaching fundamental scaling limitations. The 28nm and 22nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) [1] and FinFETs [2], respectively. Fully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa78b61c4d01a6c5a812adac15520b5
https://hal.univ-grenoble-alpes.fr/hal-01991972
https://hal.univ-grenoble-alpes.fr/hal-01991972
Autor:
Y. Bogumilowicz, J. B. Pin, Franck Bassani, R. Alcotte, Thierry Baron, Sylvain David, Mickael Martin, Errol Antonio C. Sanchez, R. Cipro, Xinyu Bao, Z. Ye, F. Ducroquet, J. Moeyaert
Publikováno v:
APL Materials, Vol 4, Iss 4, Pp 046101-046101-6 (2016)
APL Materials
APL Materials, AIP Publishing 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials
APL Materials, AIP Publishing 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
APL Materials, 2016, 4 (4), pp.046101. ⟨10.1063/1.4945586⟩
International audience; Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improveme
Autor:
Y. Bogumilowicz, Jean-Michel Hartmann, R. Alcotte, J. Moeyaert, R. Cipro, J. B. Pin, Z. Ye, Xinyu Bao, Errol Antonio C. Sanchez, Thierry Baron, Mickael Martin, Franck Bassani
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩
International audience; We have obtained Anti-Phase Boundary (APB) free GaAs epilayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the GaAs layer and the silicon substrate in order to a
Autor:
C. Vizioz, Mickael Martin, Errol Antonio C. Sanchez, Z. Ye, N. Allouti, Jean-Paul Barnes, J. B. Pin, Névine Rochat, V. Loup, Nicolas Chauvin, Xinyu Bao, Y. Bogumilowicz, Franck Bassani, V. Gorbenko, Thierry Baron, J. Moeyaert, S. David, R. Cipro
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩
Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface
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