Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R. Chris Bowen"'
Autor:
Roya Zandi, Joseph D. Fahey, Michael Drakopoulos, John M. Bryan, Siyuan Dong, Paul J. Bryar, Ann E. Bidwell, R. Chris Bowen, Jeremy A. Lavine, Rukhsana G. Mirza
Publikováno v:
Bioengineering, Vol 11, Iss 2, p 120 (2024)
In the modern era, patients often resort to the internet for answers to their health-related concerns, and clinics face challenges to providing timely response to patient concerns. This has led to a need to investigate the capabilities of AI chatbots
Externí odkaz:
https://doaj.org/article/6a086dbe942447c08e28480afd15999c
Autor:
Ganesh Hegde, R. Chris Bowen
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107142-107142-7 (2015)
The accuracy of a single s-orbital representation of Cu towards enabling multi-thousand atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic compensation charge of 0.3 electron per atom is used in this ba
Externí odkaz:
https://doaj.org/article/b2e664f19cba43d39e65ca26166a6179
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
A first principles Density Functional Theory (DFT) based framework for barrier material screening is described. The vertical component of barrier resistance - a crucial component of via resistance difficult to access through experiments - is estimate
Autor:
R. Chris Bowen, Ganesh Hegde
Publikováno v:
Scientific Reports
Large scale Density Functional Theory (DFT) based electronic structure calculations are highly time consuming and scale poorly with system size. While semi-empirical approximations to DFT result in a reduction in computational time versus ab initio D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee61f6463adb7f112d709749ab573167
http://arxiv.org/abs/1609.05737
http://arxiv.org/abs/1609.05737
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Through controlled numerical experiments using first principles density functional theory based electron transport, we find that surface effects can dominate electron transport in nanocrystalline Cu interconnects, even in transport regimes that have
Publikováno v:
physica status solidi (b). 239:71-79
Atomistic computations of electronic properties for nanostructures with strain (such as self-assembled quantum dots) typically consist of two components - a calculation of the individual atomic positions and the eigenstates of interest in the resulti
Publikováno v:
physica status solidi (c). :1149-1152
Disorder-induced broadening of the conduction and valence band eigenenergies is calculated for an ensemble of dome-shaped InGaAs quantum dots of diameter 20nm using an sp3d5s* tight binding model.
Autor:
Gerhard Klimeck, Edith Huang, Fabiano Oyafuso, R. Chris Bowen, Timothy B. Boykin, Edward Vinyard, Thomas A. Cwik
Publikováno v:
Superlattices and Microstructures. 31:171-179
Electronic device scaling is ultimately limited by atomic dimensions. The simulation of electronic structure and electron transport on these length scales must be fundamentally quantum mechanical. This leads to computational models that account for f
Publikováno v:
Journal of Computational Electronics. 1:317-321
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an sp3s* tight binding model. Two sources of broadening due to configuration and concentration disorder are i
Autor:
Ganesh Hegde, R. Chris Bowen
The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding (TB) calculations. Using simulation unit cells guid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f968521196c000875c1046a60e3b074
http://arxiv.org/abs/1405.1317
http://arxiv.org/abs/1405.1317