Zobrazeno 1 - 10
of 631
pro vyhledávání: '"R. Carius"'
Publikováno v:
Technikfolgenabschätzung – Theorie und Praxis, Vol 5, Iss 4 (1996)
Externí odkaz:
https://doaj.org/article/76a23c7e48444784908036aae897ff88
Publikováno v:
IEEE Journal of Photovoltaics. 6:597-603
We investigate the influence of surface texture on the effectiveness of reflectance by intermediate reflectors in thin-film tandem solar cells. Two distinct angular reflection regimes are identified. For large surfaces with large aspect ratios, frust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7c908968c3a42d00e4c9fde34f9e0f
https://doi.org/10.1109/jphotov.2016.2532468
https://doi.org/10.1109/jphotov.2016.2532468
Autor:
Karsten Bittkau, Michael Smeets, Kaining Ding, Uwe Rau, Ulrich W. Paetzold, Alexei Richter, R. Carius, Florian Lentz
Publikováno v:
Nanoscale 8(44), 18726-18733 (2016). doi:10.1039/C6NR04960E
Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient ligh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceffb4dbeac54c0001c1dda7281c9069
https://doi.org/10.1039/c6nr04960e
https://doi.org/10.1039/c6nr04960e
Autor:
M. Nuys, W. Rachad, Charlotte Platzer-Björkman, Finn Babbe, Susanne Siebentritt, Shuyi Li, R. Carius, Germain Rey, Conrad Spindler
Publikováno v:
Physical Review Applied, vol 9, iss 6
Physical Review Applied, 9, 064008. College Park, MD: American Physical Society (2018).
Physical Review Applied, 9, 064008. College Park, MD: American Physical Society (2018).
Author(s): Rey, G; Spindler, C; Babbe, F; Rachad, W; Siebentritt, S; Nuys, M; Carius, R; Li, S; Platzer-Bjorkman, C | Abstract: The photoluminescence (PL) of semiconductors can be used to determine their absorption coefficient (α) using Planck's gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bed077ecb890e307bc7807469bbfbc2
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-358152
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-358152
Autor:
W. Beyer, U. Breuer, R. Carius, W. Hilgers, D. Lennartz, F.C. Maier, N.H. Nickel, F. Pennartz, P. Prunici, U. Zastrow
Publikováno v:
Canadian Journal of Physics. 92:700-704
The influence of implanted hydrogen (up to a concentration level of 3 at. %) on the microstructure of silicon (Si) materials is investigated by Fourier transform infrared spectroscopy as well as by effusion of hydrogen and of (low dose) implanted hel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c79b53fd07b751aee3910c7664b4044
https://doi.org/10.1139/cjp-2013-0555
https://doi.org/10.1139/cjp-2013-0555
Publikováno v:
Canadian Journal of Physics. 92:905-908
Theoretically predicted values of the open circuit voltage (VOC) for a-Si:H or μc-Si:H based solar cells are substantially higher than the values achieved in of state-of-the-art devices. Fundamentally, open circuit voltage is determined by generatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0d754f4b26cd437c7d1881ed1c9ffa
https://doi.org/10.1139/cjp-2013-0610
https://doi.org/10.1139/cjp-2013-0610
Autor:
R. Carius, Christophe Ballif, Karsten Bittkau, D. Weigand, Andreas Lambertz, Lorenzo Fanni, Etienne Moulin, Laura Ding, Sylvain Nicolay, Ulrich W. Paetzold, Andreas Bauer, Joachim Kirchhoff, Markus Ermes
Publikováno v:
Materials Science and Engineering: B. 178:645-650
Thin-film silicon solar cells often apply a metal back reflector (BR) separated from the silicon layers by a thin rear dielectric of thickness around 80 nm or a white paint combined with a thick rear dielectric of several micrometers. In this work, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ca00f912e0f7be17ff11222b0a64da9
https://doi.org/10.1016/j.mseb.2012.10.016
https://doi.org/10.1016/j.mseb.2012.10.016
Publikováno v:
Journal of Non-Crystalline Solids. 358:2044-2047
The anomalous sign of the Hall coefficient in amorphous semiconductors is still poorly understood. It seems accepted, however, that an anomalous sign of the Hall coefficient indicates a different charge transport mechanism compared to free carrier mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93bb7382e71843c1a489d9a70ac4b035
https://doi.org/10.1016/j.jnoncrysol.2012.01.059
https://doi.org/10.1016/j.jnoncrysol.2012.01.059
Publikováno v:
Journal of Non-Crystalline Solids. 358:1954-1957
We report on the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction microcrystalline silicon (μc-Si:H) solar cells are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f36bec2962441babf57e1a84d086743e
https://doi.org/10.1016/j.jnoncrysol.2011.12.019
https://doi.org/10.1016/j.jnoncrysol.2011.12.019
Autor:
Martina Luysberg, Tao Chen, Maurice Nuys, Florian Köhler, R. Carius, Friedhelm Finger, Anna Heidt
Publikováno v:
Journal of Non-Crystalline Solids. 358:2011-2014
We present the results of investigations on a variety of stoichiometric μc-SiC:H films deposited by Hot-Wire- and Plasma-Enhanced Chemical Vapour Deposition using monomethylsilane diluted in hydrogen as precursor gas. Infrared spectroscopy, grazing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc944811c1bbb7b584882a16f5f5014e
https://doi.org/10.1016/j.jnoncrysol.2011.12.057
https://doi.org/10.1016/j.jnoncrysol.2011.12.057