Zobrazeno 1 - 9
of 9
pro vyhledávání: '"R. C. Quinn"'
Autor:
R. C. Quinn, Jeffrey S. Kauppila, T. Daniel Loveless, Ronald D. Schrimpf, J. A. Maharrey, Dennis R. Ball, J. D. Rowe, Michael L. Alles, Lloyd W. Massengill
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1589-1598
A new geometry-aware single-event enabled compact model for sub-50 nm partially depleted silicon-on-insulator MOSFETs is presented. The model extends the bias-dependent single-event modeling methods with an integrated parasitic BJT using the SPICE Gu
Autor:
R. C. Quinn, K. Lilja, M. Bounasser, Bharat L. Bhuva, Y. P. Chen, Lloyd W. Massengill, Jeffrey S. Kauppila, Kevin M. Warren
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Classical probability models have been found to underestimate or overestimate the SET latching frequency dependence. This work develops an improved model for transient latching probability and compares models using 32nm SOI SET data.
Autor:
J. A. Maharrey, R. C. Quinn, T. D. Loveless, J. D. Rowe, Jeffrey S. Kauppila, Lloyd W. Massengill, K. Lilja, Michael W. McCurdy, Bharat L. Bhuva, En Xia Zhang, Michael L. Alles, Robert A. Reed, M. Bounasser, W.T. Holman
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the
Autor:
W. Timothy Holman, Jeffrey S. Kauppila, J. A. Maharrey, Bharat L. Bhuva, Lloyd W. Massengill, R. C. Quinn, T. Daniel Loveless, En Xia Zhang
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
A comprehensive data set of heavy-ion induced single-event transients has been collected for inverter chains fabricated in the IBM 32nm partially-depleted silicon-on-insulator technology across various bias voltages, transistor variants, ion energies
Autor:
J. A. Maharrey, T. D. Loveless, R. C. Quinn, Jeffrey S. Kauppila, Michael W. McCurdy, Lloyd W. Massengill, K. Lilja, Bharat L. Bhuva, Robert A. Reed, Michael L. Alles
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
D-flip-flop designs hardened with stacked transistors for a 32-nm SOI CMOS technology show greater than three orders of magnitude decrease in soft error cross-section, up to a heavy-ion tested tilt angle of 55°, and greater than one order of magnitu
Publikováno v:
Icarus. 112:537-540
We have measured the adsorption of molecular nitrogen (N2) on palagonite, and modeled the adsorbed nitrogen inventory on the martian regolith. We were motivated by the fact that models of isotopic evolution predict stronger N2 fractionation than repo
Autor:
R C, Quinn, A P, Zent
Publikováno v:
Origins of life and evolution of the biosphere : the journal of the International Society for the Study of the Origin of Life. 29(1)
Hydrogen peroxide chemisorbed on titanium dioxide (peroxide-modified titanium dioxide) is investigated as a chemical analog to the putative soil oxidants responsible for the chemical reactivity seen in the Viking biology experiments. When peroxide-mo
Autor:
F J, Grunthaner, A J, Ricco, M A, Butler, A L, Lane, C P, McKay, A P, Zent, R C, Quinn, B, Murray, H P, Klein, G V, Levin, R W, Terhune, M L, Homer, A, Ksendzov
Publikováno v:
Analytical chemistry. 67(19)
The solubilization and partial purification of a glucuronyl transferase from rabbit liver microsomes
Publikováno v:
The Journal of biological chemistry. 237