Zobrazeno 1 - 10
of 26
pro vyhledávání: '"R. C. Bowman"'
Autor:
R C, Bowman, M P, Halasy
Publikováno v:
Rural and remote health. 14(2)
Autor:
R C, Bowman
Publikováno v:
Rural and remote health. 12
Publikováno v:
Zeitschrift für Physikalische Chemie. 1:625-630
Autor:
R C, Bowman
Publikováno v:
Rural and remote health. 8(3)
Autor:
R C, Bowman
Publikováno v:
Rural and remote health. 8(3)
Numerous reports highlight the problem of declining primary care capacity in the USA, especially in rural and remote areas. The reasons for declining primary care capacity are elusive. Little progress is likely without better definitions, tools, and
Autor:
R C, Bowman, J C, Kulig
Publikováno v:
Rural and remote health. 8(2)
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1577-1581
Thin films of the narrow gap semiconductor α‐Sn and α‐Sn1−x Gex alloys have been successfully grown on CdTe(100) and InSb(100) substrates by molecular‐beam epitaxy (MBE). The quality and homogeneity of these metastable epilayers depend stro
Publikováno v:
Semiconductor Science and Technology. 5:S73-S77
Information on both the alloy composition and the lattice properties of Hg1-xCdxTe for x-values between 0.20 and 0.31 have been obtained by resonance Raman spectroscopy with laser photon energies between 2.35 and 2.7 eV. In addition to the HgTe-like
Publikováno v:
Semiconductor Science and Technology. 5:S240-S244
The electronic structure and interface properties of epitaxial alpha -Sn and alpha -Sn1-xGex alloy films grown by molecular beam epitaxy on GaSb, CdTe, InSb and Ge substrates were studied by synchrotron radiation photoemission spectroscopy and X-ray
Publikováno v:
Advances in X-ray Analysis. 34:531-541
Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pul