Zobrazeno 1 - 10
of 32
pro vyhledávání: '"R. Bytheway"'
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Digital X-ray diffraction imaging (XRDI) and high-resolution X-ray diffraction (HRXRD) are used to analyse defects in a non-destructive way on commercially made (111) CdZnTe substrates. The X-ray tools automatically aligned, measured and analysed the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415712e1a5c9cb9f035fe2de6f5bd01c
https://doi.org/10.1109/asmc.2018.8373142
https://doi.org/10.1109/asmc.2018.8373142
Autor:
Patrick J. McNally, J. Garagorri, M.R. Elizalde, D. Jacques, Patrik Vagovic, A.N. Danilewsky, D.K. Bowen, Tilo Baumbach, R. Bytheway, J. Wittge, David Allen, M. C. Fossati, Brian K. Tanner
Publikováno v:
Powder Diffraction. 28:95-99
The apparatus for X-ray diffraction imaging (XRDI) of 450-mm wafers, is now placed at the ANKA synchrotron radiation source in Karlsruhe, is described in the context of the drive to inspect wafers for plastic deformation or mechanical damage. It is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c854b2e59291fdd7ab40387b61a316bf
https://doi.org/10.1017/s0885715613000122
https://doi.org/10.1017/s0885715613000122
Publikováno v:
Organometallics. 18:1761-1766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0589ca3aa8523d06e3974ed527c1fef2
https://doi.org/10.1021/om980993y
https://doi.org/10.1021/om980993y
Publikováno v:
Organometallics. 17:3974-3980
The preference for coplanarity of alkenyl and carbonyl ligands in η1-alkenyl transition-metal complexes can be understood in terms of a simple molecular orbital model in which the nonbonding metal t2g orbitals interact with the π* orbitals of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78680b97d398248f2ed74cfc9ac3a890
https://doi.org/10.1021/om9803669
https://doi.org/10.1021/om9803669
Autor:
M. Wormington, B. Yokhin, D. Berman, A. Krokhmal, I. Mazor, P. Ryan, J. Wall, R. Bytheway, David G. Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
High‐resolution X‐ray diffraction (HRXRD) is an established technique for the characterization and metrology of epitaxial thin‐films. However, its use by the silicon semiconductor industry has been limited due to the stringent reliability, spot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3eb49b55f1b8961193c7f5ecaec7b3
https://doi.org/10.1063/1.3657890
https://doi.org/10.1063/1.3657890
Publikováno v:
X-Ray Spectrometry: Recent Technological Advances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610986e4279e161b923d08733ea04772
https://doi.org/10.1002/0470020431.ch2
https://doi.org/10.1002/0470020431.ch2
Autor:
Zhenyang Lin, Ian R. Bytheway
Publikováno v:
Journal of the American Chemical Society. 120:12133-12134
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff9773a5d79fb482d876af15ee0dd0a
https://doi.org/10.1021/ja981851y
https://doi.org/10.1021/ja981851y
Autor:
W. R. Bytheway
Publikováno v:
Ageing and Society. 1:347-364
Introductory descriptions of the contemporary ‘old age phenomenon’ tend to draw heavily upon demographic statistics. An analysis of such descriptions in popular books on retirement show that the ways in which these are presented and interpreted r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012b1d8988bfc10f9410ce8cece1a5d8
https://doi.org/10.1017/s0144686x00008953
https://doi.org/10.1017/s0144686x00008953
Autor:
W. R. Bytheway
Publikováno v:
Journal of Biosocial Science. 2:337-349
SummaryAge-specific mortality rates have been used to illustrate certain aspects of the characteristics of old age. A consideration of the experience of the ageing person in his fifties and early sixties suggests that during this period he comes to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fbc9d0f9312d52a9286a89d611cc9c
https://doi.org/10.1017/s0021932000000183
https://doi.org/10.1017/s0021932000000183
Autor:
M. R. Elizalde, A.N. Danilewsky, E. Gorostegui-Colinas, R. Bytheway, Patrick J. McNally, Brian K. Tanner, J. Garagorri
Publikováno v:
International journal of fracture, 2015, Vol.195(1-2), pp.79-85 [Peer Reviewed Journal]
The geometry of fracture associated with the propagation of cracks originating at the edges of (001) oriented, 200 mm diameter silicon wafers has been investigated under two regimes of high temperature processing. Under spike annealing, fracture did
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ca5fa0ef556d42c21cc57d65eddd61