Lifetime assessment in crystalline silicon: From nanopatterned wafer to ultra-thin crystalline films for solar cells

Autor: Ismael Cosme, P. Roca i Cabarrocas, Martin Foldyna, Wanghua Chen, Valerie Depauw, Christos Trompoukis, Romain Cariou, R. Boukhicha, Ki-Dong Lee

Publikováno v: Solar Energy Materials and Solar Cells. 135:93-98

We have studied surface passivation on nanopatterned crystalline silicon (c-Si) wafers (280 µm), thin c-Si wafers (25 µm), ultrathin (~1–6 µm) low temperature epitaxial PECVD and epitaxy-free silicon. Nanopatterned front surfaces were produced b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6911e745d51275bd3ead5643a5e8673f
https://doi.org/10.1016/j.solmat.2014.10.019

Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

Autor: R. Boukhicha, J.F. Lerat, Pere Roca i Cabarrocas, Coralie Charpentier, Erik Johnson, Patricia Prod'Homme, T. Emeraud

Publikováno v: Thin Solid Films. 555:13-17

We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::286ff45a7d18533842bc78a5daf17f97
https://doi.org/10.1016/j.tsf.2013.08.014

Impact on Thin Film Silicon Properties and Solar Cell Parameters of Texture Generated by LaserAnnealing and Chemical Etching of ZnO:Al

Autor: Antoine Michel, D. Daineka, R. Boukhicha, Erik Johnson, J.F. Lerat, T. Emeraud, Pere Roca i Cabarrocas

Publikováno v: MRS Proceedings. 1536:45-50

The use of a laser annealing and chemical texturing process (dubbed the LaText process) on room-temperature sputtered ZnO:Al has been shown to generate unusually high haze properties, favorable for thin film silicon solar cells.This is due to the mel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36372a7aa8ca5d929f85c6309b050d78
https://doi.org/10.1557/opl.2013.914

Size effect on Ge nanowires growth kinetics by the vapor–liquid–solid mechanism

Autor: C. Gardes, S. Hajjar, R. Boukhicha, Vy Yam, Laetitia Vincent, G. Garreau, Charles Renard, J.L. Bubendorff, Frédéric Fossard, Daniel Bouchier, Candido Pirri

Publikováno v: Thin Solid Films. 520:3314-3318

Germanium nanowires were grown on germanium (111) substrate by ultra high vacuum chemical vapor deposition, via the vapor–liquid–solid growth mechanism, using digermane as gaseous precursor and gold as catalyst. The results show that the nanowire

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae9173c86d56fdfc45388f82134ee95f
https://doi.org/10.1016/j.tsf.2011.10.089

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

Autor: R. Boukhicha, Laetitia Vincent, Nikolay Cherkashin, Daniel Bouchier, Charles Renard, Vy Yam, Gilles Patriarche, Shay Reboh, Frédéric Fossard

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩
Nanotechnology, 2012, 23 (39), ⟨10.1088/0957-4484/23/39/395701⟩

International audience; For most applications, heterostructures in nanowires (NWs) with lattice mismatched materials are required and promise certain advantages thanks to lateral strain relaxation. The formation of Si/Ge axial heterojunctions is a ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db0069507024f2e0b7dac92820ad6142
https://hal.archives-ouvertes.fr/hal-01736036