Výsledky vyhledávání

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Autor: F. Bertin, Olivier Renault, C. Dubourdieu, Blanka Detlefs, F. Pierre, Eugénie Martinez, R. Boujamaa, S. Baudot, Mickael Gros-Jean, Jörg Zegenhagen

Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2015, 335, pp.71-77. ⟨10.1016/j.apsusc.2015.02.022⟩
Applied Surface Science, 2015, 335, pp.71-77. ⟨10.1016/j.apsusc.2015.02.022⟩

International audience; In this paper, we report the effect of high temperature annealing on the chemical and electronic structure of technologically relevant TiN/LaOx/HfSiON/SiON/Si gate stacks. Using medium energy ion scattering from the backside o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6da1a3c437326828c46a330122a93733
https://doi.org/10.1016/j.apsusc.2015.02.022

Zobrazit plný text záznamu

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs

Autor: P. Caubet, P. Normandon, C. Leroux, Mickael Gros-Jean, Gerard Ghibaudo, Roland Pantel, R.A. Bianchi, R. Boujamaa, S. Baudot, S. Zoll, Magali Gregoire

Publikováno v: Microelectronic Engineering. 88:569-572

The MOSFET gate length reduction down to 32nm requires the introduction of a metal gate and a high-K dielectric as gate stack, both stable at high temperature. Here we use a nanometric layer of Lanthanum to shift the device threshold voltage from 500

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87b1bd5394d776cf1d6c15a630390fb8
https://doi.org/10.1016/j.mee.2010.06.016

Zobrazit plný text záznamu

Backside medium energy ion scattering study of the lanthanum diffusion in advanced gate stacks for the 32nm node

Autor: Jean-Paul Barnes, D. Jalabert, François Bertin, R. Boujamaa, M. Py, F. Pierre

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 111 (7), pp.29-32. ⟨10.1016/j.mee.2013.05.004⟩
Microelectronic Engineering, 2013, 111 (7), pp.29-32. ⟨10.1016/j.mee.2013.05.004⟩

International audience; The insertion of a La2O3 capping layer in high-k gate dielectric stacks is a solution for tuning the threshold voltage in nMOSFETs devices. We have investigated TiN/ LaOx /HfSiON/SiON on Si(001) gate stacks by medium energy io

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2df7dba4f599ec8aa8598fe651b5e66
https://hal.archives-ouvertes.fr/hal-02019703

Zobrazit plný text záznamu

Impact of high temperature annealing on La diffusion and flatband voltage (V-fb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks

Autor: Roland Pantel, F. Martin, Virginie Loup, François Bertin, O. Renault, Catherine Dubourdieu, Jörg Zegenhagen, Blanka Detlefs, Eugénie Martinez, M. Gros-Jean, R. Boujamaa, S. Baudot, Névine Rochat

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2012, 111 (5), pp.054110. ⟨10.1063/1.3684709⟩
Journal of Applied Physics, 2012, 111 (5), pp.054110. ⟨10.1063/1.3684709⟩

International audience; We present a detailed analysis of the impact of high temperature annealing on the chemical and electronic properties of TiN/HfSixOyNz/SiOxNy/Si gate stacks, where an ultra-thin LaOx capping layer (0.4-1 nm) is inserted between

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dbc6ed1dfa568f7046b42bf001d3f07
https://hal.archives-ouvertes.fr/hal-01067605

Zobrazit plný text záznamu

Advanced backside sample preparation for multi-technique surface analysis

Autor: Charbel Roukoss, M. Veillerot, J.M. Fabbri, Bernard Pelissier, F. Pierre, D. Jalabert, C. Trouiller, R. Boujamaa, M. Py, J. P. Barnes

Publikováno v: European Physical Journal: Applied Physics
European Physical Journal: Applied Physics, EDP Sciences, 2011, 55 (3), ⟨10.1051/epjap/2011110191⟩

International audience; Backside sample preparation is a well-known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37224deaad2685d86e80b9a85c9ca95c
https://hal.archives-ouvertes.fr/hal-00724133

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání