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pro vyhledávání: '"R. Bommena"'
Akademický článek
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Autor:
Priyalal Wijewarnasuriya, R. Kodama, Sutharsan Ketharanathan, Jeremy D. Bergeson, J. Zhao, Christopher Buurma, R. Bommena, Silviu Velicu, Nibir K. Dhar, F. Aqariden
Publikováno v:
Journal of Electronic Materials. 44:3151-3156
The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates is reported. High-quality n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9405b02e2a1c20a25951cd94469a24ec
https://doi.org/10.1007/s11664-015-3852-z
https://doi.org/10.1007/s11664-015-3852-z
Autor:
Christoph H. Grein, Christopher Buurma, S. Fahey, C.P. Morath, J. Zhao, L. Treider, R. Bommena, S. Sivananthan, D. Guidry, Paul Boieriu
Publikováno v:
Journal of Electronic Materials. 43:2831-2840
HgCdTe is the standard state-of-the-art infrared detector material for space applications. HgCdTe-based infrared photon detector performance can be hindered due to the presence of bulk crystal defects and dangling bonds at surfaces or interfaces. Pas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea2c35cbc6ff92aeae61c626280159f3
https://doi.org/10.1007/s11664-014-3122-5
https://doi.org/10.1007/s11664-014-3122-5
Publikováno v:
Journal of Electronic Materials. 42:3283-3287
Low-cost silicon-based alternative substrates are an attractive choice for next-generation large-area high-resolution multicolor infrared (IR) detector arrays. However, the high density of dislocations formed during molecular-beam epitaxy growth of H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc5a02015ddecb6e96b3a89e949d0e3
https://doi.org/10.1007/s11664-013-2726-5
https://doi.org/10.1007/s11664-013-2726-5
Publikováno v:
Journal of Electronic Materials. 42:3379-3384
Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only inductively coupled plasma (ICP) was used to incorporate hydrogen into long-wavelength infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfe5049139f1fddbb4221413d5d04cfd
https://doi.org/10.1007/s11664-013-2717-6
https://doi.org/10.1007/s11664-013-2717-6
Publikováno v:
Journal of Electronic Materials. 41:2899-2907
We report here the use of molecular beam epitaxy (MBE) to achieve selectivearea epitaxy (SAE) and coalescence of CdTe on nanopatterned substrates with 0.5-μm-pitch arrays of CdTe/ZnTe/Si(211) seeding areas, exposed through a silicon nitride mask. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f42f504c4f85ef13b15cb55f1ec6c075
https://doi.org/10.1007/s11664-012-2056-z
https://doi.org/10.1007/s11664-012-2056-z
Autor:
J. Zhao, D. McCammon, R. Bommena, R. L. Kelley, M. Carmody, C. H. Grein, P. Dreiske, Caroline A. Kilbourne, D. E. Brandl
Publikováno v:
Journal of Electronic Materials. 39:1087-1096
Arrays of x-ray microcalorimeters will enable broadband, high-resolution x-ray spectroscopy to study and substantiate black holes, dark matter, and other celestial phenomenon. At EPIR we continue to achieve growth of high-quality, low-doped, single-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb14f04020e89f9859a4932854de139c
https://doi.org/10.1007/s11664-010-1249-6
https://doi.org/10.1007/s11664-010-1249-6
Autor:
Sivalingam Sivananthan, Thomas Seldrum, Srj Brueck, Robert Sporken, R. Bommena, Louise Samain
Publikováno v:
Journal of Electronic Materials. 37:1255-1260
Silicon-based substrates for the epitaxy of HgCdTe are an attractive low-cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of Hg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7abc2afbb039b25963977a316d86890c
https://doi.org/10.1007/s11664-008-0456-x
https://doi.org/10.1007/s11664-008-0456-x
Autor:
Stephen Fahey, Vincent M. Cowan, Christian P. Morath, Sivalingam Sivananthan, Silviu Velicu, R. Bommena, J. Zhao
Publikováno v:
SPIE Proceedings.
High performance infrared sensors are vulnerable to slight changes in defect densities and locations. For example in a space application where such sensors are exposed to proton irradiation capable of generating point defects the sensors are known to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435de6d7fa1f3205249e70badbe9465d
https://doi.org/10.1117/12.2189829
https://doi.org/10.1117/12.2189829
Publikováno v:
Journal of Electronic Materials. 34:704-709
Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbacfb3aeb78050ace865836c3e66b66
https://doi.org/10.1007/s11664-005-0007-7
https://doi.org/10.1007/s11664-005-0007-7