Zobrazeno 1 - 10
of 147
pro vyhledávání: '"R. Berjoan"'
Publikováno v:
Microporous and Mesoporous Materials. 80:183-193
Two complementary wearing off cycling methods based on an initial wet oxidation in a sodium hypochlorite solution or an initial dry oxidation under air, both followed by a thermal pyrolysis under nitrogen, have been applied to a same carbon molecular
Publikováno v:
Thin Solid Films. 471:53-62
Silicon oxide thin films were deposited at low temperatures by Plasma-Enhanced Chemical Vapour Deposition (PECVD) from silane–nitrousoxide (SiH 4 –N 2 O) and silane–nitrous oxide–helium (SiH 4 –N 2 O–He) mixtures. The film structure is sh
Publikováno v:
Mineral Processing and Extractive Metallurgy Review. 25:287-312
The total extraction of sulfur by vaporization from iron sulfide ores leads to a residue that is constituted in great part of iron. The aim of this article is to follow up the secondary metals composition in the residue during the sulfur extraction.
Publikováno v:
Minerals Engineering. 13:609-622
Thermal treatments of two feldspars (FELA and FELB) have been performed in air at various temperature, ranging from 200°C up to 800°C. The influence of this heating on the efficiency of cadmium removal from aqueous solutions by immersing these two
Publikováno v:
Plasma Chemistry and Plasma Processing. 19:171-189
Transferred-arc plasma treatment of iron sulfides containing gold is examined from both thermodynamic and experimental points of view. Three cases are analyzed: argon plasma with sulfide, argon plasma with a carbon–sulfide mixture, and argon–meth
Publikováno v:
Annales de Chimie Science des Matériaux. 23:733-742
Resume Des films a base de carbure de silicium a degre d'ordre variable ont ete elabores avec des vitesses de depot de 3 a 60 μm/h par depot chimique en phase vapeur assiste par un plasma microonde (2.45 GHz type magnetron et surfaguide) a partir de
Publikováno v:
Materials and Manufacturing Processes. 13:415-422
Thin films of c-WN: H are synthesized by plasma enhanced chemical vapor deposition using a hot wall type reactor. These films are polycrystalline. The formation temperatures are in the 350-620°C range with WF6, NH3, as precursors and Ar and H2 as fe
Publikováno v:
Journal of Materials Science. 32:1187-1193
During the atmospheric re-entry of space shuttles, the thermal constraints due to the hypersonic velocity can lead to very extensive damage on materials of the protective heat shield (oxidation, thermal shock, etc.). In order to test the oxidation re
Publikováno v:
Journal of Materials Science. 32:1305-1312
The results of a comparative study of the resistance to oxidation of AlN and a codeposit of AlN–Si3N4 are presented. The oxidation of both types of layer was performed at 1200°C in an oxygen gas flow (pO2∼1 atm). A thermogravimetric analysis was
Publikováno v:
Superconductor Science and Technology. 9:805-813
Oxide ceramics with compositions were prepared by high-temperature reaction in the temperature range from a mixture of the powder oxides , and CuO. Microthermogravimetric measurements on these ceramics containing excess CuO or deficient in CuO have s