Zobrazeno 1 - 10
of 88
pro vyhledávání: '"R. Beneyton"'
Autor:
R. Ranica, R. Berthelon, A. Gandolfo, G. Samanni, E. Gomiero, J. Jasse, P. Mattavelli, J. Sandrini, M. Querre, Y. Le-Friec, J. Poulet, V. Caubet, L. Favennec, C. Boccaccio, G. Ghezzi, C. Gallon, JC. Grenier, B. Dumont, O. Weber, A. Villaret, R. Beneyton, N. Cherault, D. Ristoiu, S. Del Medico, O. Kermarrec, JP. Reynard, P. Boivin, A. Souhaite, L. Desvoivres, S. Chouteau, PO. Sassoulas, L. Clement, A. Valery, E. Petroni, D. Turgis, A. Lippiello, L. Scotti, F. Disegni, A. Ventre, D. Ornaghi, M. De Tomasi, A. Maurelli, A. Conte, F. Arnaud, A. Redaelli, R. Annunziata, P. Cappelletti, F. Piazza, P. Ferreira, R. Gonella, E. Ciantar
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::652fcb15ec770ffda0355c498b7b0e9e
https://doi.org/10.1109/iedm19574.2021.9720669
https://doi.org/10.1109/iedm19574.2021.9720669
Autor:
N. Bresson, D. Guiheux, R. Beneyton, Sandrine Lhostis, Joris Jourdon, D. Bouchu, Stephane Moreau, Hélène Fremont, S. Renard
Publikováno v:
IRPS
IRPS, Apr 2017, Monterey, United States. ⟨10.1109/IRPS.2017.7936378⟩
IRPS, Apr 2017, Monterey, United States. ⟨10.1109/IRPS.2017.7936378⟩
This paper presents electromigration results on a hybrid bonding-based test vehicle to study the impact of bonding and passivation annealings on backend of line robustness. Black's parameters extraction leads to typical values of Cu-based interconnec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70cc39c1722b541891595fbad9cedf9b
https://hal.science/hal-01552793
https://hal.science/hal-01552793
Autor:
C. Trouiller, B. Imbert, S. Delmedico, R. Beneyton, S. Zoll, Olivier P. Thomas, Magali Gregoire
Publikováno v:
Microelectronic Engineering. 85:2005-2008
Nickel based silicide films were prepared by annealing nickel-platinum layers deposited on n doped Si substrates. We report on the evolution of the phase formation and the redistribution of contaminants on blanket wafers during silicide formation as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876f2904266a16ad0d3a4791ca963e1b
https://doi.org/10.1016/j.mee.2008.04.021
https://doi.org/10.1016/j.mee.2008.04.021
Publikováno v:
IEEE Transactions on Nuclear Science. 49:474-477
LHCb is a dedicated B-physics experiment under construction at CERN's large hadron collider (LHC) accelerator. This paper will describe the novel approach LHCb is taking toward controlling and monitoring of electronics boards. Instead of using the bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c3fc9645adc729a7bfded725624a241
https://doi.org/10.1109/tns.2002.1003779
https://doi.org/10.1109/tns.2002.1003779
Autor:
Nicolas Loubet, R. Beneyton, T. Morel, Stephane Denorme, L. Pinzelli, B. Le-Gratiet, Francois Leverd, Stephane Monfray, G. Bidal, J.-L. Huguenin, M.-P. Samson, Sébastien Barnola, Aomar Halimaoui, K. Benotmane, Thomas Skotnicki, Frederic Boeuf, C. De-Butet, Gerard Ghibaudo, Christian Arvet, Y. Campidelli, Pascal Gouraud, P. Perreau
Publikováno v:
SSDM 2010
SSDM 2010, 2010, tokyo, Japan
HAL
SSDM 2010, 2010, tokyo, Japan
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cab4d94a457099f7252be35b1cf4a04
https://hal.science/hal-00604648
https://hal.science/hal-00604648
Autor:
C. Fenouillet-Beranger, P. Perreau, L. Pham-Nguyen, S. Denorme, F. Andrieu, L. Tosti, L. Brevard, O. Weber, S. Barnola, T. Salvetat, X. Garros, M. Casse, M. Cassé, C. Leroux, J.P Noel, O. Thomas, B. Le-Gratiet, F. Baron, M. Gatefait, Y. Campidelli, F. Abbate, C. Perrot, C. de-Buttet, R. Beneyton, L. Pinzelli, F. Leverd, P. Gouraud, M. Gros-Jean, A. Bajolet, C. Mezzomo, C. Leyris, S. Haendler, D. Noblet, R. Pantel, A. Margain, C. Borowiak, E. Josse, N. Planes, D. Delprat, F. Boedt, K. Bourdelle, B.Y. Nguyen, F. Boeuf, O. Faynot, T. Skotnicki
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
In this paper, we present FD-SOI with High-K and Single Metal gate as a possible candidate for LP multimedia technology. Dual gate oxide co-integrated devices with EOT 17A/V dd 1.1V and 29A/V dd 1.8V are reported. The interest of Ultra-Thin Buried Ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994e16265336178cb061f24a3f45c9d2
https://doi.org/10.1109/iedm.2009.5424251
https://doi.org/10.1109/iedm.2009.5424251
Autor:
G. Bidal, F. Boeuf, F. Payet, S. Denorme, N. Loubet, P. Perreau, C. Mezzomo, M. Marin, D. Fleury, C. Leyris, F. Leverd, P. Gouraud, C. Laviron, R. Beneyton, A. Torres, B. Imbert, D. Delille, L. Clement, G. Ghibaudo, T. Skotnicki
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d45d80d40992e16f69ef038f82a54f
https://doi.org/10.7567/ssdm.2008.a-7-1
https://doi.org/10.7567/ssdm.2008.a-7-1
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
Epilayers of (Ga/sub 1-y/In/sub y/)/sub 1-x/Tl/sub x/As on InP(001), Ga/sub 1-x/Tl/sub x/As on GaAs(001) and In/sub 1-x/Tl/sub x/As on InAs(001) have been successfully grown using low-temperature solid-source molecular beam epitaxy (LT-SS-MBE). The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f889f4fdc68525191eb50261430d3c2
https://doi.org/10.1109/iciprm.2004.1442766
https://doi.org/10.1109/iciprm.2004.1442766
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2005, 275 (1-2), pp.e1171-e1175. ⟨10.1016/j.jcrysgro.2004.11.206⟩
Journal of Crystal Growth, Elsevier, 2005, 275 (1-2), pp.e1171-e1175. ⟨10.1016/j.jcrysgro.2004.11.206⟩
In this work, we investigate the growth of GaTlAs single-crystals on GaAs (0 0 1) substrates using low-temperature solid-source molecular-beam-epitaxy (LT-SS-MBE). We have determined the critical thickness above which twinning appears in relation to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aff033ce9d9d5b91ec3bc63a5aae7b5
https://hal.archives-ouvertes.fr/hal-02090249
https://hal.archives-ouvertes.fr/hal-02090249
Autor:
G. Hollinger, Ph. Regreny, R. Beneyton, Catherine Priester, Geneviève Grenet, Bruno Canut, Michel Gendry
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 72, pp.125209-1-10
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.125209-1-10
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 72, pp.125209-1-10
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.125209-1-10
The aim of this paper is to show---from both an experimental and a theoretical point of view---why it is so difficult to incorporate thallium into III-V semiconductors. The experimental part describes how ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Tl}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cfcc81a19e8a817104990affd74827c
https://hal.archives-ouvertes.fr/hal-00125352
https://hal.archives-ouvertes.fr/hal-00125352