Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. Bausiere"'
Publikováno v:
Scopus-Elsevier
In adjustable speed drive applications operating at high switching frequencies, common mode and differential mode perturbations may cause premature ageing of electric machines and important electro...
Publikováno v:
IEEE Transactions on Power Electronics. 21:849-855
As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher
Publikováno v:
Revue internationale de génie électrique. 7:49-74
Publikováno v:
2007 IEEE Power Electronics Specialists Conference.
Active gate voltage control (AGVC) consists in introducing an intermediate voltage level into the control voltage of isolated gate transistors at turn-on: it allows to force the rate- of-rise of current through the switched-on device to a fixed value
Publikováno v:
2006 12th International Power Electronics and Motion Control Conference.
The use of high frequency switching power devices in Adjustable Speed Drives (ASDs) induces high voltage variations (dv/dt) that excite the parasitic elements of the power circuit, leading to conducted emissions at high frequencies. The advent of the
Publikováno v:
Scopus-Elsevier
In adjustable speed drive (ASD) applications, most cables connecting the electronic voltage source to the AC-motor are multi-wire and shielded. The various inductive and capacitive effects are at the origin of high frequency phenomena that require mo
Autor:
Nadir Idir, R. Bausiere
Publikováno v:
Proceedings of IEEE Systems Man and Cybernetics Conference - SMC.
This paper reports on a new numerical model of GTO thyristor embedded in a buck converter configuration. The GTO thyristor and the free-wheeling diode undergo and/or generate various types of stresses which cannot appear if the switches are modelled
Publikováno v:
International Conference on Power Electronics Machines and Drives.
Introducing intermediate levels into the gate control voltage of isolated gate transistors allows to slow down current or voltage rising into the switching device, thus reducing overcurrent due to reverse recovery of the associated diode, and resulti
Publikováno v:
Seventh International Conference on Power Electronics and Variable Speed Drives.
In this paper, we show the influence of the current gradient on the high frequency current harmonics in power electronic converters and demonstrate the advantage of wave forms which have derivatives with no discontinuities. This enable us to carry ou
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