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Publikováno v:
International journal of sports medicine. 31(2)
We determined the validity of the Nike+ ® device for estimating speed, distance, and energy expenditure (EE) during walking and running. Twenty trained individuals performed a maximal oxygen uptake test and underwent anthropometric and body composit
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power s
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
This paper describes performance of power PHEMT technology at K-band. Power PHEMT modules are shown to deliver an average output power of 4.7 watts and an average power-added efficiency (P.A.E.) of 38.5% over the 18.0 to 21.2 GHz frequency range for
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Two power component design approaches: IMFET and SuperIMFET for the C-Band commercial SATCOM down link SSPA have been successfully developed. The functions and the performance of these two product types are compared. For the IMFET approach, when PHEM
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
This paper describes performance of power PHEMT technology at X-band. Power PHEMT modules are shown to deliver an average output power of 12.3 watts and an average power-added efficiency (P.A.E.) of 40.8% over the 8.5 to 10.5 GHz frequency range for
Publikováno v:
Proceedings of the 1991 International Conference on Microelectronic Test Structures.
The use of gate isolated test transistors can lead to the creation of process-induced charges which cannot occur on transistors implemented on circuits. A test structure has been designed to separate the intrinsic process related defects which can re
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
A new 2.5-2.7 GHz High-Power GaAs FET for the MMDS application is presented. It uses two pairs of pre-matched chips mounted on the same carrier and combined in push-pull configuration with a microstrip balun. This device exhibits 60 W of output power
Publikováno v:
Journal of cosmetic science. 52(1)
This paper presents three quantitative methods to examine gloss, opacity, and friction of cationic polymers. The adsorption of cationic polymers onto hair and skin can be regarded as a thin film coating. Therefore, optical and frictional properties o
Publikováno v:
47th ARFTG Conference Digest.
This paper describes an automated High Power Amplifier Test System (HPATS) specially designed for tuning, testing and characterization of high power solid state devices during their development. In the 1.0 to 17.0 GHz bandwidth, Si Bipolar, Si MOSFET