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pro vyhledávání: '"R. Badheka"'
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Publikováno v:
Journal of Sol-Gel Science and Technology. 32:53-56
Organic tethers have been incorporated into acid- and base-catalysed silica sol–gels. The surface area is modified by this insertion suggesting an interaction at a molecular level. The HCl-catalysed SiO2 sol–gel had its relative extent of adsorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d434a3f683683a36d28237d44e5d893
https://doi.org/10.1007/s10971-004-5764-x
https://doi.org/10.1007/s10971-004-5764-x
Autor:
R. Badheka, Paul A. Sermon
Publikováno v:
Journal of Sol-Gel Science and Technology. 32:149-153
MgF2 protective and antireflective coatings have been conventionally produced by sputtering or chemical vapour deposition CVD [1, 2], but here sol-gel routes to MgF2 are explored. MgF2(M) and MgF2(E) were prepared using an alkoxide:HF:ROH mole ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f51224dae49c6805f1456f424edc0e
https://doi.org/10.1007/s10971-004-5780-x
https://doi.org/10.1007/s10971-004-5780-x
Publikováno v:
BASE-Bielefeld Academic Search Engine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a2713cba5b3a1d6360784f58fe19b2e
https://doi.org/10.4028/www.scientific.net/jmnm.13.359
https://doi.org/10.4028/www.scientific.net/jmnm.13.359
Publikováno v:
Journal of Materials Synthesis and Processing. 8:369-375
Generally, the Si–C–O system is composed of SiO2, SiC, and pure C as crystalline phases. In the present study, we focus on the preparation of ternary silicon oxycarbide compound. For this purpose, different mixtures of quartz, silicon, and graphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd820629555f1bb7f1d7022e3af41cbb
https://doi.org/10.1023/a:1011362932162
https://doi.org/10.1023/a:1011362932162
Publikováno v:
Radiation Effects and Defects in Solids. :513-524
The computer program IMPETUS calculates sputter depth profiles by solving Fokker-Plank type equations for mixing. In the standard model, the effective volume of the mixing constituents is taken to be constant throughout the mixing regardless of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c3b6422a2a25a8006d2f36cb24f1ec
https://doi.org/10.1080/10420159408219809
https://doi.org/10.1080/10420159408219809
Publikováno v:
Vacuum. 44:331-335
The ability to grow very thin δ doped layers is an important feauture of molecular beam epitaxial growth and in principle sub-monolayer deposition of dopant during interruption of the flux of matrix atoms allows the subsequently buried doped layer t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af56a61e406ef4004c77911df7db8b7
https://doi.org/10.1016/0042-207x(93)90178-d
https://doi.org/10.1016/0042-207x(93)90178-d
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 64:609-613
After O2 ions, Cs is the second most important probe in high-sensitivity SIMS depth profiling analysis due to the achievable high (negative) secondary ion yields. However the depth distribution of Cs is not very well known. We have investigated the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b573e0f1a558072f713430b7463bf724
https://doi.org/10.1016/0168-583x(92)95543-z
https://doi.org/10.1016/0168-583x(92)95543-z
Publikováno v:
Materials Science and Engineering: B. 12:83-89
Detailed experimental studies of the build-up of a stoichiometric SiO 2 layer in silicon substrates during bombardment with 15 keV 18 O + and 16 O + ions have provided a valuable insight into the implantation, sputtering and desorption processes that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905c4e04c91c3ea5d4ab6424c6aed6aa
https://doi.org/10.1016/0921-5107(92)90264-a
https://doi.org/10.1016/0921-5107(92)90264-a
Publikováno v:
Surface Science. 237:213-231
Low energy Ar ion bombardment is increasingly used as a surface preparation prior to thin film deposition, and in the etching of semiconductor materials for modern microelectronic devices. A study of the radiation damage and gas build-up effects asso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55b33e387ff2b1a7b22300fbfe8e76a
https://doi.org/10.1016/0039-6028(90)90533-e
https://doi.org/10.1016/0039-6028(90)90533-e