Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. B. Khamankar"'
Publikováno v:
Journal of Applied Physics. 88:5351-5359
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E-model controversy that has existed for many years as to the true physics behind time-dependent dielectric breakdown (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802b59e8aa54ab2a25010c6848db32d7
https://doi.org/10.1063/1.1318369
https://doi.org/10.1063/1.1318369
Publikováno v:
Microelectronics Reliability. 40:1591-1597
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E TDDB model controversy that has existed for many years It is shown here that either TDDB model can be valid for certa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678f26c6a1b4a706748fa32e582465ec
https://doi.org/10.1016/s0026-2714(00)00172-4
https://doi.org/10.1016/s0026-2714(00)00172-4
Autor:
R B Khamankar, J W McPherson
Publikováno v:
Semiconductor Science and Technology. 15:462-470
SiO2 films, at constant electric field, show a significant reduction in time-dependent dielectric breakdown (TDDB) performance when the thickness tox is scaled below 4.0 nm. This reduction in TDDB performance is coincident with and scales with the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f36f694967591311ac4a502d06def86
https://doi.org/10.1088/0268-1242/15/5/305
https://doi.org/10.1088/0268-1242/15/5/305