Výsledky vyhledávání - "R. B. Casady"

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance

Autor: Janna R. B. Casady, Hrishikesh Das, Swapna Sunkari, Josh Rodgers, Timothy R. Oldham

Publikováno v: Materials Science Forum. :221-224

Homoepitaxial layers with very good thickness and doping uniformity were grown on 4 inch 4˚ off-axis substrates in a 10x100mm planetary reactor. Process optimizations resulted in reduction of the size of the triangular defects. Aggressive pre-etchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::278db42a19072ea1e7e0eb5fbb6fa385
https://doi.org/10.4028/www.scientific.net/msf.740-742.221

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High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC

Autor: Janna R. B. Casady, Jeff B. Casady, Swapna Sunkari, Hrishikesh Das, Timothy Oldham

Publikováno v: Materials Science Forum. :93-96

In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b47e84fdb98da22677c60056ceb459b
https://doi.org/10.4028/www.scientific.net/msf.717-720.93

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Increase of SiC Substrate Resistance Induced by Annealing

Autor: P. Sasahara, Janna R. B. Casady, Arnd Dietrich Weber, Erwin Schmitt, Richard L. Woodin, Gary M. Dolny, J. Shovlin, Jeff B. Casady, Tony Witt, Thomas Straubinger

Publikováno v: Materials Science Forum. :223-226

We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent annea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c186b12fd1443445feffe7d2a27c2108
https://doi.org/10.4028/www.scientific.net/msf.645-648.223

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Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

Autor: Yaroslav Koshka, Hrishikesh Das, Swapna Sunkari, Janna R. B. Casady, Carl Hoff, Jeff B. Casady

Publikováno v: Materials Science Forum. :423-426

4H Silicon Carbide (4H-SiC) has a great potential for low-loss power devices due to its superior electrical properties. However, the increase in demand for the power devices requires high quality SiC substrates and epitaxial layers. Mercury probe Cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8e905c224539b336b20bd47d7bfc40b
https://doi.org/10.4028/www.scientific.net/msf.615-617.423

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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Autor: R. Gray, Jeff B. Casady, David C. Sheridan, R.L. Kelly, James D. Scofield, P. Martin, Lin Cheng, Janna R. B. Casady, G. Tian, Michael S. Mazzola, S. Morrison, Volodymyr Bondarenko

Publikováno v: Materials Science Forum. :1051-1054

In this work we report the most recent high-temperature long-term reliability results of the 600 V/14 A, 4H-SiC vertical-channel junction field-effect transistors (VJFETs). Two groups (A and B) devices were subjected to different thermal and electric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8ecdbf0abbc9e821d7789d387d73de4
https://doi.org/10.4028/www.scientific.net/msf.600-603.1051

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Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Autor: Lin Cheng, Janna R. B. Casady, Michael S. Mazzola, Jeff B. Casady, Igor Sankin, J. Neil Merrett, V. Bondarenko, Robin L. Kelley

Publikováno v: Materials Science Forum. :1183-1186

In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with 6.6-ns rise time, 7.6-ns fall time, 4.8-ns turn-on and 5.4-ns turn-off delay time at 2.5 A drain current (IDS), whi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ff0e80f19ecf73c63a4a6adf5e4f9bd
https://doi.org/10.4028/www.scientific.net/msf.527-529.1183

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Highly Uniform SiC Epitaxy for MESFET Fabrication

Autor: Janna R. B. Casady, Jeff B. Casady, Jie Zhang, Esteban Romano, Michael S. Mazzola, Carl Hoff, C. Rivas, Kevin Matocha, Janice Mazzola

Publikováno v: Materials Science Forum. :195-198

This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of < 2% for thickness and < 10% for doping has been routinely obtained for both 3x2-in. and 1x3-in. growth. The h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53a80dee65e3c32b01916ae9e2a25b78
https://doi.org/10.4028/www.scientific.net/msf.527-529.195

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