Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. B. Bylsma"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1285-1288
Scanning spreading resistance microscopy (SSRM) is a powerful tool originally developed for measuring two-dimensional (2D) carrier distributions in Si device structures with nm spatial resolution. Whereas its application has been explored in detail o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac568702a0410029e84da5d1786b64bb
https://doi.org/10.1116/1.581809
https://doi.org/10.1116/1.581809
Autor:
Julia W. P. Hsu, E. Betzig, C.C. Bahr, J. K. Trautman, R. B. Bylsma, S. K. Buratto, M. J. Cardillo
Publikováno v:
Journal of Applied Physics. 76:7720-7725
The application of near-field scanning optical microscopy (NSOM) to the characterization of InGaAsP multiquantum-well lasers is reported. Collection mode images are collected at varying drive currents from well below to well above the threshold curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a37d094f53c720865154f1953f2397
https://doi.org/10.1063/1.357946
https://doi.org/10.1063/1.357946
Publikováno v:
Applied Physics Letters. 73:2155-2157
Scanning spreading resistance microscopy (SSRM) is an analytical technique originally developed for measuring two-dimensional carrier distribution in Si device structures with high spatial resolution. It is in essence an atomic force microscope equip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7cce666bd64e15f17e6210350ff488b
https://doi.org/10.1063/1.122408
https://doi.org/10.1063/1.122408
Autor:
J. K. Trautman, Julia W. P. Hsu, C.C. Bahr, R. B. Bylsma, M. J. Cardillo, S. K. Buratto, E. Betzig
Publikováno v:
Applied Physics Letters. 65:2654-2656
A new contrast method in near-field scanning optical microscopy in which the near-field probe is used to excite photocurrent in a semiconductor sample is described and demonstrated. The use of near-field optics results in an order-of-magnitude improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfe6cf8733fe975a9c6e7ecf9d865b5
https://doi.org/10.1063/1.112593
https://doi.org/10.1063/1.112593
Publikováno v:
Electronics Letters. 26:482
Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH/sub 2/) is reported. The 1 mu m gate FETs have a maximum e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c6575a376ce0de7688e3533ab7cf13
https://doi.org/10.1049/el:19900313
https://doi.org/10.1049/el:19900313
Autor:
A.T. Macrander, Timothy D. Harris, R. B. Bylsma, J. K. Klingert, M. G. Lamont, R. M. Lum, Alastair M. Glass
Publikováno v:
Journal of Applied Physics. 64:6727-6732
GaAs hereroepitaxial films on Si contain a high number of misfit dislocations and large internal stresses due to the lattice and thermal mismatch of the two materials. These greatly affect the structural, optical, and electrical properties of the fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4acd76f394c720c4544f8065d1db222f
https://doi.org/10.1063/1.342004
https://doi.org/10.1063/1.342004
Publikováno v:
Physical Review B. 33:8207-8215
Photoluminescence and reflectivity measurements have been carried out on ${\mathrm{Zn}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$Se solid solutions in the complete range of crystal compositions, 0\ensuremath{\le}x\ensuremath{\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1f6f5c2e1f98ad7db5badbd7cd014c
https://doi.org/10.1103/physrevb.33.8207
https://doi.org/10.1103/physrevb.33.8207
Autor:
Jacek K. Furdyna, T. C. Bonsett, Supriyo Datta, W. M. Becker, Robert L. Gunshor, R. B. Bylsma, Nobuo Otsuka, M. Yamanishi, L.A. Kolodziejski
Publikováno v:
Journal of Crystal Growth. 72:294-298
Cd 1− x Mn x Te superlattices with periodically varying Mn content have recently been grown epitaxially on (100) GaAs substrates. Two orientations of the epilayer, (100) and (111), have been reported by different research groups. Recent experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9462f8da6bbc96de2309caa3d4c1d149
https://doi.org/10.1016/0022-0248(85)90161-7
https://doi.org/10.1016/0022-0248(85)90161-7
Autor:
W. M. Becker, R. B. Bylsma, Leslie A. Kolodziejski, Jacek Kossut, Robert L. Gunshor, R. Frohne
Publikováno v:
Journal of Applied Physics. 61:3011-3019
Measurements of photoluminescence and photoluminescence excitation spectra at liquid helium temperatures are presented for films of ZnSe, Zn1−xMnxSe (0≤x≤0.33), and multilayer structures ZnSe/Zn1−xMnxSe (x=0.23, 0.33, and 0.51) grown by molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b420976826da0f4aef637a7061faad06
https://doi.org/10.1063/1.337851
https://doi.org/10.1063/1.337851
Publikováno v:
Applied Physics Letters. 51:889-891
The first study of the photorefractive properties of doped CdTe has demonstrated high sensitivity for optical processing applications. Of the binary II‐VI and III‐V semiconductors, CdTe has the highest electro‐optic coefficient r41 in the infra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22300f6a202eded0161d87d4298a4090
https://doi.org/10.1063/1.98845
https://doi.org/10.1063/1.98845