Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R. B. Burlakov"'
Autor:
R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 4 (172), Pp 60-65 (2020)
Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barri
Externí odkaz:
https://doaj.org/article/8b5dceca3aea4200894e5f9f7339dcdc
Autor:
R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 3 (171), Pp 86-91 (2020)
Way of the fabrication and results of studies of photoelectric features of photocell with two Schottky barrier opaque contacts Al-p-Si on one party of the silicon plate and ohmic silicide contact Ni2 Si-p-Si (or Pd2 Si-p-Si) situated on the oppo
Externí odkaz:
https://doaj.org/article/c86e4984133d4816ab2d4df96a3cd597
Autor:
R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 1 (169), Pp 62-66 (2020)
Way for the fabrication and results of studies of photoelectric features of twospectrum photocell with two Schottky barrier contacts Ti-p-Si on one party of the silicon plate and ohmic silicide contact NiSi-p-Si situated on the opposite party of t
Externí odkaz:
https://doaj.org/article/1689a77736f34ca89cea48b54fb1289f
Autor:
A. I. Blesman, R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 1 (169), Pp 67-72 (2020)
Probe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin
Externí odkaz:
https://doaj.org/article/75fd5f5a56be4286acd9a12b4ed8c67c
Autor:
A. I. Blesman, R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 4 (166), Pp 55-60 (2019)
Structure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Au-n-GaAs are сonsidered. There are measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short c
Externí odkaz:
https://doaj.org/article/b71f2ada918443dba1ec9203a091fe99
Publikováno v:
Омский научный вестник, Vol 4 (166), Pp 61-65 (2019)
Task of studies is a development of the structure and way of the fabrication of the photocell capable to take a radiation or in near infrared region of the spectrum (1–1,4) microns, or in the field of (0,5–1,4) microns. Way of fabrication and
Externí odkaz:
https://doaj.org/article/3588ed6665074d99aa81fa51697902d5
Autor:
A. I. Blesman, R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 3 (165), Pp 78-83 (2019)
Structure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Pd-n-GaAs are сonsidered. There is measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short ci
Externí odkaz:
https://doaj.org/article/e930475325724ba38d502a79293d74ac
Autor:
A. I. Blesman, R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 1 (163), Pp 50-54 (2019)
Task of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results
Externí odkaz:
https://doaj.org/article/5583d6fd6a7b4e37a356daf03e7bab1e
Autor:
R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 4 (160), Pp 119-123 (2018)
Modified variant of the method Cox-Strack, which allows to reduce an amount of frontal contacts on the test sample before 2 and simultaneously exclude an operation of the extrapolation of schedules at the determination of the specific contact resi
Externí odkaz:
https://doaj.org/article/ff6999799cc444c78c5ae519e76cef48
Autor:
A. I. Blesman, R. B. Burlakov
Publikováno v:
Омский научный вестник, Vol 6 (168), Pp 80-82 (2019)
The offered vacuum vaporizer can be used under the vacuum fabrication of films from Cr, Mg, Mn, SiO, GeO, MoO3 , WO3, ZnS, ZnSe, CdS, CdSe, CdTe by sublimations. Vacuum vaporizer containing tubular element with tightly closed by flat end areas,
Externí odkaz:
https://doaj.org/article/48bbb43de6224c3a9f0bb4c9d71d9d62