Zobrazeno 1 - 10
of 123
pro vyhledávání: '"R. Alben"'
Publikováno v:
MRS Bulletin. 43:796-796
Publikováno v:
Physical Review B. 13:1821-1829
Autor:
R. Alben, J. J. Rehr
Publikováno v:
Physical Review B. 16:2400-2407
Publikováno v:
Physical Review B. 15:346-357
Autor:
David Beeman, R. Alben
Publikováno v:
Advances in Physics. 26:339-361
Results of calculations of vibrational densities of states and of infrared and Raman spectra for relatively large model structures representing elemental amorphous semiconductors are presented and discussed. Models for four-coordinated (germanium-lik
Publikováno v:
Physical Review B. 15:1422-1426
Autor:
R. Alben, Michael Thorpe
Publikováno v:
Journal of Physics C: Solid State Physics. 9:2555-2568
A numerical method involving the time integration of equations of motion is developed for calculating response functions of antiferromagnets. The method is particularly useful in calculating dynamic response functions S(k, omega ) and can also be use
Publikováno v:
Journal of Non-Crystalline Solids. 15:199-214
Two elastic-energy-relaxed continuous random network (Polk) models for tetrahedrally bonded amorphous semiconductors have been obtained: a 201-atom model built entirely at Yale and a 519-atom model relaxed from a structure built by Polk and Boudreaux
Publikováno v:
Journal of Applied Physics. 49:1653-1658
Random anisotropy is present in all amorphous magnetic materials, and depending on its strength, it can dramatically affect the magnetic behavior. We describe the effect of strong random anisotropy in materials such as amorphous Tb‐Fe and Dy‐Fe a
Publikováno v:
Journal of Physics C: Solid State Physics. 8:L468-L472
The authors use the equation-of-motion method to obtain directly the one-band density of states, projected on interior atoms, for three approximately 500-unit continuous random network models for amorphous group IV semiconductors and one 533-atom con