Zobrazeno 1 - 10
of 38
pro vyhledávání: '"R. Abdia"'
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9783030364748
In this paper, we present investigations of electron hopping conduction by measuring the temperature dependence of electrical resistivity of n- CdAs2 semiconductor. The resistivity was measured without magnetic field as well as in its presence. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b8fe23a38e020b29087b2ac79c086d2
https://doi.org/10.1007/978-3-030-36475-5_26
https://doi.org/10.1007/978-3-030-36475-5_26
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Autor:
A. Narjis, S. Dlimi, Jamal Hemine, Abdelhamid El Kaaouachi, R. Abdia, Gerard Biskupski, L. Limouny, A. Sybous
Publikováno v:
Journal of Modern Physics. :521-528
We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in th
Autor:
Jamal Hemine, A. Narjis, Abdelhamid El Kaaouachi, S. Dlimi, Gerard Buskipski, L. Limouny, R. Abdia, A. Sybous
Publikováno v:
Journal of Modern Physics. :447-450
We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T
Autor:
Jamal Hemine, A. Sybous, Gerard Biskupski, Abdessadek Aboudihab, A. Narjis, S. Dlimi, L. Limouny, R. Abdia, Abdelhamid El Kaaouachi
Publikováno v:
Journal of Modern Physics. :517-520
On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginn
Autor:
J. Hemine, A. El kaaouachi, S. Dlimi, A. Sybous, L. Limouny, R. Abdia, G. Biskupski, A. Narjis
Publikováno v:
Physica B: Condensed Matter. 406:4155-4158
On the insulating side of the metal–insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon–nickel alloys a-Si 1− y Ni y :H exhibits that the electrical conductivity follows, at
Autor:
N. Ait Ben Ameur, J. Hemine, H. Sahsah, A. Narjis, Bruno Capoen, G. Biskupski, A. Sybous, R. Abdia, A. El kaaouachi
Publikováno v:
Physica B: Condensed Matter. 406:3489-3492
We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal–insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2–0.066 K) and in
Publikováno v:
Annales de chimie Science des Matériaux. 33:357-364
Dans ce travail, nous avons utilise le phenomene de la magnetoresistance pour expliquer le passage du regime de conduction par saut a distance variable de Mott vers celui d'E-S dans un echantillon isolant d'InP. En effet nous avons observe sur cet ec
Publikováno v:
Physica B: Condensed Matter. 373:96-99
Experimental results are reported on field positive magnetoresistance in a CdSe sample in which variable-range hopping occurs at low temperatures. Positive magnetoresistance associated with variable-range hopping conduction has been observed. Experim