Zobrazeno 1 - 10
of 41
pro vyhledávání: '"R. A. Soref"'
Publikováno v:
Optics Express. 30:42385
We propose a lattice-matched Ge/GeSiSn quantum cascade detector (QCD) capable of operating in the longwave infrared. The optical absorption and carrier transport based on intersubband transitions all occur within the L-valley of the conduction band o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eaa7df93a98f00dddcf19305c37a063
https://doi.org/10.1364/oe.473564
https://doi.org/10.1364/oe.473564
The objective of this research was to develop 1) direct-bandgap Sn-based group-IV material with very low defect densities and 2) a new type of Sn-based group-IV light-emitting diode (LED) structure. Optimization of traditional and hetero- P-i-N struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79822976529bf6c4530a76968c9bf6f6
https://doi.org/10.21236/ada615859
https://doi.org/10.21236/ada615859
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:376-380
The first phonon-pumped semiconductor laser has been proposed and theoretically investigated. The active region is an unbiased boron-doped Si/sub 0.94/Ge/sub 0.06/-Si superlattice with Si/sub 0.97/Ge/sub 0.03/ buffer layers embedded in a surface-plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dbbd75d35a27611c8719f8d0d07ae38
https://doi.org/10.1109/2944.954153
https://doi.org/10.1109/2944.954153
Publikováno v:
Physical Review B. 57:6550-6560
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda550d2325e8454a90d5f82c0fa5dff
https://doi.org/10.1103/physrevb.57.6550
https://doi.org/10.1103/physrevb.57.6550
Publikováno v:
Superlattices and Microstructures. 22:3-7
Because of the absence of polar optical phonon scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0764146f7faae0033dc3a472a5b6f28e
https://doi.org/10.1006/spmi.1996.0337
https://doi.org/10.1006/spmi.1996.0337
This is the final report of a project to fabricate tin-based IV-IV semiconductor compounds for obtaining direct bandgap material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be97308a1393bcbbd1fa5323ab9f6d3
https://doi.org/10.21236/ada530763
https://doi.org/10.21236/ada530763
Autor:
R. A. Soref, A. R. Nelson
Publikováno v:
Applied optics. 16(1)
An extensive theoretical analysis of an electrooptic polarization switch has been carried out. The main objective of the study is to ascertain whether it is possible to design such a switch with acceptable levels of optical crosstalk and control volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7eb682af293532d123eb1beab495c72e
https://pubmed.ncbi.nlm.nih.gov/20168439
https://pubmed.ncbi.nlm.nih.gov/20168439
Autor:
L. R. Schissler, R. A. Soref
Publikováno v:
Applied optics. 14(11)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4919eda042b855b8099fff1d3e57638b
https://pubmed.ncbi.nlm.nih.gov/20155059
https://pubmed.ncbi.nlm.nih.gov/20155059
Publikováno v:
2010 3rd International Nanoelectronics Conference (INEC).
We report a theoretical investigation on the electrical characteristic of n-type resonance tunneling diode for IV-IV compound. From the analysis, it shows that PVR ratio of the D4 band is significant larger than the D2 band as due to the much smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed7975369641e7bd59b24c5eec7a162
https://doi.org/10.1109/inec.2010.5424923
https://doi.org/10.1109/inec.2010.5424923
Autor:
R. A. Soref
Publikováno v:
Journal of Applied Physics. 72:626-630
Miller’s delta δ14(2ω) of 0.0172 m2/C is found for β‐SiC at 1.1 μm from the measured Pockels coefficient r41 [Appl. Phys. Lett. 59, 1938 (1991)]. Assuming δ is constant, we estimate that r41 for zincblende SiC, GeC, SiGe, SiSn, GeSn, and SnC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3bddeb1b136d7322592af2759387ad
https://doi.org/10.1063/1.351844
https://doi.org/10.1063/1.351844