Zobrazeno 1 - 10
of 17
pro vyhledávání: '"R. A. Rubtsova"'
Publikováno v:
Russian Mathematics. 66:112-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::add6f1973c74e57b73050e04d7254d77
https://doi.org/10.3103/s1066369x22120088
https://doi.org/10.3103/s1066369x22120088
Publikováno v:
Russian Mathematics. 66:70-73
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36da31322b165dc2e0cb6ffb8b64ffcf
https://doi.org/10.3103/s1066369x22020049
https://doi.org/10.3103/s1066369x22020049
Autor:
V. N. Shabanov, V. P. Kuznetsov, D. I. Kryzhov, G. A. Maksimov, D. Yu. Remizov, A. N. Shushunov, O. V. Belova, M. V. Stepikhova, Z. F. Krasilnik, R. A. Rubtsova
Publikováno v:
Semiconductors. 40:846-853
In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of room-temperature electroluminescence at 1.54 μm is studied as a function of the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9dede5b1761153309a3729bc689aaf
https://doi.org/10.1134/s1063782606070207
https://doi.org/10.1134/s1063782606070207
Autor:
V. P. Kuznetsov, R. A. Rubtsova
Publikováno v:
Semiconductors. 34:502-509
The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300–77 K. No electric activity of Er-containing luminescent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85871255b2d392acdfb447f7721c406c
https://doi.org/10.1134/1.1188015
https://doi.org/10.1134/1.1188015
Publikováno v:
Physics of the Solid State. 42:548-553
The optical and electrophysical properties of the GaAs/In0.25Ga0.75As heterostructure with a symmetric double quantum well have been investigated. The influence of tunneling electrons and holes through an internal barrier of the quantum well on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98526bd112f13ea7959a3329a7dfbb52
https://doi.org/10.1134/1.1131247
https://doi.org/10.1134/1.1131247
Autor:
M. V. Stepikhova, V. B. Shmagin, S Lanzerstorfer, Z. F. Krasilnik, E. A. Uskova, A. Yu. Andreev, R. A. Rubtsova, Leopold Palmetshofer, Nikolai S. Sokolov, K. Piplits, Boris A. Andreev, Herbert Hutter, H. Ellmer, V. P. Kuznetsov
Publikováno v:
Journal of Crystal Growth. :534-537
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si : Er layers with a high concentration of Er and O (up to ∼ 10 19 cm -3 ) and high quality of crystalline structure. All samples exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7e8048917439bba1a661dde65c81e3d
https://doi.org/10.1016/s0022-0248(98)01406-7
https://doi.org/10.1016/s0022-0248(98)01406-7
Autor:
Z. F. Krasilnik, Boris A. Andreev, A. Yu. Andreev, M. V. Stepikhova, K. Piplits, V. B. Shmagin, R. A. Rubtsova, Leopold Palmetshofer, E. A. Uskova, Yu. A. Karpov, M. N. Drozdov, V. P. Kuznetsov, Herbert Hutter, H. Ellmer
Publikováno v:
Scopus-Elsevier
A study is made of the electrical, optical, and structural properties of Si:Er layers produced by sublimation molecular-beam epitaxy. The Er and O contents in the layers, grown at 400–600°C, were as high as 5×1018 and 4×1019 cm−3, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f143a2accc187206ea9aade9870b5193
https://doi.org/10.1134/1.1187658
https://doi.org/10.1134/1.1187658
Autor:
V. B. Shmagin, A. V. Andreev, Herbert Hutter, R. A. Rubtsova, Leopold Palmetshofer, M. V. Stepikhova, H. Ellmer, H. Preier, K. Piplits, Z. F. Krasilnik, W. Jantsch, V. P. Kuznetsov, Yu. A. Karpov, Boris A. Andreev
Publikováno v:
Acta Physica Polonica A. 94:549-554
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ac92969e9bf46f09b9e617b7dbe1ea
https://doi.org/10.12693/aphyspola.94.549
https://doi.org/10.12693/aphyspola.94.549
Autor:
V.I. Vdovin, A. L. Chernov, N. A. Gorodilov, L. K. Orlov, O.A. Kuznetsov, R. A. Rubtsova, V. I. Gavrilenko, N. G. Kalugin
Publikováno v:
Solid State Phenomena. :469-474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::485a512e282d58c12ef5420157755325
https://doi.org/10.4028/www.scientific.net/ssp.32-33.469
https://doi.org/10.4028/www.scientific.net/ssp.32-33.469
Autor:
A. L. Chernov, O.A. Mironov, M. Oszwałdowski, O. A. Kuznetsov, B.A. Aronzon, L. K. Orlov, R. A. Rubtsova, N.K. Chumakov, S. V. Chistyakov
Publikováno v:
Superlattices and Microstructures. 10:467-470
For the first time, research on the unique galvanomagnetic properties of the hole gas in the channels of selectively doped CVD Ge-Ge 1−X Si X (X≤0, 2) superlattices with strained Ge layers was carried out. We have obtained a high value of the hol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b04a0d826cc6d6d13013836c0be093f
https://doi.org/10.1016/0749-6036(91)90311-e
https://doi.org/10.1016/0749-6036(91)90311-e