Výsledky vyhledávání - "R. A. Puglisi"

Carbon-Free Solution-Based Doping for Silicon

Autor: R. A. Puglisi, Sebastiano Caccamo

Publikováno v: Nanomaterials, Vol 11, Iss 2006, p 2006 (2021)
Nanomaterials
Volume 11
Issue 8

Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32eada734b05c538fabea7490057da51
https://www.mdpi.com/2079-4991/11/8/2006

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Study of the Molecule Adsorption Process during the Molecular Doping

Autor: Jost Adam, Maria Grazia Grimaldi, Silvia Scalese, Antonino La Magna, R. A. Puglisi, Neda Rahmani, Mattia Pizzone

Publikováno v: Nanomaterials
Volume 11
Issue 8
Nanomaterials, Vol 11, Iss 1899, p 1899 (2021)
Pizzone, M, Grimaldi, M G, La Magna, A, Rahmani, N, Scalese, S, Adam, J & Puglisi, R A 2021, ' Study of the molecule adsorption process during the molecular doping ', Nanomaterials, vol. 11, no. 8, 1899 . https://doi.org/10.3390/nano11081899

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1e60c524f3876fd8bf5a61dc250e84b

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Direct observation of single organic molecules grafted on the surface of a silicon nanowire

Autor: Giuseppe Fisicaro, Giovanni Mannino, Stefan Goedecker, Antonino La Magna, Corrado Bongiorno, Sebastiano Caccamo, Luigi Genovese, R. A. Puglisi

Publikováno v: Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports
Scientific reports (Nature Publishing Group) 9 (2019): 5647. doi:10.1038/s41598-019-42073-5
info:cnr-pdr/source/autori:Rosaria A. Puglisi, Sebastiano Caccamo, Corrado Bongiorno, Giuseppe Fisicaro, Luigi Genovese, Stefan Goedecker, Giovanni Mannino & Antonino La Magna/titolo:Direct observation of single organic molecules grafted on the surface of a silicon nanowire/doi:10.1038%2Fs41598-019-42073-5/rivista:Scientific reports (Nature Publishing Group)/anno:2019/pagina_da:5647/pagina_a:/intervallo_pagine:5647/volume:9

Silicon nanowires inspire since decades a great interest for their fundamental scientific importance and their potential in new technologies. When decorated with organic molecules they form hybrid composites with applications in various fields, from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e009a039ff1dede1af4afd36d7b047f
http://link.springer.com/article/10.1038/s41598-019-42073-5

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Transparent conductive polymer obtained by in-solution doping of PEDOT:PSS

Autor: R. A. Puglisi, Luisa D'Urso, Silvia Scalese, Giovanni Mannino, Daniele Spucches, Valentina Lombardo, Antonino La Magna, Antonio Terrasi

Publikováno v: Polymer (Guildford) 155 (2018): 199–207. doi:10.1016/j.polymer.2018.09.045
info:cnr-pdr/source/autori:Valentina Lombardo, Luisa D'Urso, Giovanni Mannino, Silvia Scalese, Daniele Spucches, Antonino La Magna, Antonio Terrasi, Rosaria A. Puglisi/titolo:Transparent conductive polymer obtained by in-solution doping of PEDOT:PSS/doi:10.1016%2Fj.polymer.2018.09.045/rivista:Polymer (Guildford)/anno:2018/pagina_da:199/pagina_a:207/intervallo_pagine:199–207/volume:155

PEDOT:PSS has found an increasing interest in materials science for its advantages such as transparency, low cost, low environmental impact, conformality and easiness for deposition. However, its poor electrical properties have led the research towar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5680e12005ac72eb30260de299dab085
https://doi.org/10.1016/j.polymer.2018.09.045

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Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm

Autor: Enza Fazio, Silvia Scalese, Sebastiano Caccamo, Corrado Bongiorno, R. A. Puglisi, Antonino La Magna, Giovanni Mannino, Daniele Spucches, Fortunato Neri

Publikováno v: ACS Omega, Vol 4, Iss 19, Pp 17967-17971 (2019)
ACS omega (2019). doi:10.1021/acsomega.9b01488
info:cnr-pdr/source/autori:Rosaria A. Puglisi, Corrado Bongiorno, Sebastiano Caccamo, Enza Fazio, Giovanni Mannino, Fortunato Neri, Silvia Scalese, Daniele Spucches, Antonino La Magna/titolo:Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm/doi:10.1021%2Facsomega.9b01488/rivista:ACS omega/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume
ACS Omega

Quantum confinement effects in silicon nanowires (SiNWs) are expected when their diameter is less than the size of the free exciton (with a Bohr radius ∼5 nm) in bulk silicon. However, their synthesis represents a considerable technological challen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e516345cf598a3631f4d471dfd5a4ad4
http://hdl.handle.net/11570/3148140

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Study on the physico-chemical properties of the Si nanowires surface

Autor: Giovanni Borgh, Silvia Scalese, Antonino La Magna, Corrado Bongiorno, Giovanni Mannino, C. Garozzo, R. A. Puglisi, Fortunato Neri, Giovanna Pellegrino, Enza Fazio

Publikováno v: Nanomaterials
Nanomaterials (Basel) 9 (2019): 818. doi:10.3390/nano9060818
info:cnr-pdr/source/autori:Rosaria A. Puglisi*, Corrado Bongiorno, Giovanni Borgh, Enza Fazio, Cristina Garozzo, Giovanni Mannino, Fortunato Neri, Giovanna Pellegrino, Silvia Scalese and Antonino La Magna/titolo:Study on the Physico-Chemical Properties of the Si Nanowires Surface/doi:10.3390%2Fnano9060818/rivista:Nanomaterials (Basel)/anno:2019/pagina_da:818/pagina_a:/intervallo_pagine:818/volume:9
Nanomaterials, Vol 9, Iss 6, p 818 (2019)
Volume 9
Issue 6

Silicon nanowires (Si-NWs) have been extensively studied for their numerous applications in nano-electronics. The most common method for their synthesis is the vapor&ndash
liquid&ndash
solid growth, using gold as catalyst. After the growth,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e29cfb6b0ca2da3d8f113958acb8c66c
http://hdl.handle.net/11570/3142868

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Observation of the nucleation kinetics of Si quantum dots on SiO2 by EFTEM

Autor: Giuseppe Nicotra, Salvatore Lombardo, C. Spinella, R. A. Puglisi, G. Ammendola, Cosimo Gerardi

Publikováno v: Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::565483700434079df5264a79ff03e53a
https://doi.org/10.1201/9781351074636-27

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Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties

Autor: Maria Grazia Grimaldi, R. A. Puglisi, Antonino La Magna, Sebastiano Caccamo, Giovanni Mannino, M. Italia

Publikováno v: Physica status solidi. A, Applied research (Internet) (2018): 1800114. doi:10.1002/pssa.201800114
info:cnr-pdr/source/autori:Sebastiano Caccamo, Maria Grazia Grimaldi, Markus Italia, Antonino La Magna, Giovanni Mannino, Rosaria A. Puglisi/titolo:Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties/doi:10.1002%2Fpssa.201800114/rivista:Physica status solidi. A, Applied research (Internet)/anno:2018/pagina_da:1800114/pagina_a:/intervallo_pagine:1800114/volume

The molecular doping (MD) process consists of depositing a molecular precursor on a silicon substrate, covering the precursor with a cap layer and annealing the sample to decompose the precursor and diffuse dopant atoms within Si. In the literature,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0913de502af86ff94aa52298cb491de4
http://www.cnr.it/prodotto/i/388615

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