Zobrazeno 1 - 4
of 4
pro vyhledávání: '"R. A. Milovanov"'
Autor:
D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov
Publikováno v:
Российский технологический журнал, Vol 8, Iss 5, Pp 44-67 (2020)
Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM h
Externí odkaz:
https://doaj.org/article/52c68c3244374809bef65525df2292a2
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:836-847
The review is devoted to modern techniques of the nondestructive determination of the thickness of thin films based on scanning electron microscopy and energy dispersive X-ray analysis. A general approach for determining the thickness of thin films b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b180884008939d0fed8f53cf989237c5
https://doi.org/10.1134/s1027451019050136
https://doi.org/10.1134/s1027451019050136
Publikováno v:
SPIE Proceedings.
In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4209d6ac94f0496cef2ce6024e328b2d
https://doi.org/10.1117/12.2265570
https://doi.org/10.1117/12.2265570
Publikováno v:
SPIE Proceedings.
During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcc8eb4821143e66eb772dd5f7525f7
https://doi.org/10.1117/12.2181191
https://doi.org/10.1117/12.2181191