Zobrazeno 1 - 10 of 56 pro vyhledávání: '"R. A. Kubiak"'
1
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
Autor: Evan H. C. Parker, Terry E. Whall, C. P. Parry, E. Başaran, R. A. Kubiak
Publikováno v: Journal of Crystal Growth. 157:109-112
The electrochemical capacitance-voltage profiling (eCV) technique is employed to measure the carrier concentration in heavily boron-doped Si, grown by molecular beam epitaxy. Secondary ion mass spectrometry (SIMS) and Hall measurements are also carri
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c10747c335194838ac4842658a12d39
https://doi.org/10.1016/0022-0248(95)00397-5
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3
Thermodynamic behaviour of GeO2 formed by oxygen implantation into relaxed Si0.5Ge0.5 alloy
Autor: J.E. Castle, S.M. Newstead, John F. Watts, H.D. Liu, Terry E. Whall, P.L.F. Hemment, R. A. Kubiak, Evan H. C. Parker, J.P. Zhang
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:281-285
The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investigated and quantified. The sample used in this experiment consisted of a 900 nm relaxed layer of Si0.5Ge0.5 alloy capped with 78 nm of silicon which was
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71d6160ca1fd133342899dabb1d920d6
https://doi.org/10.1016/0168-583x(94)00500-1
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4
Photoluminescence and photoreflectance study of Si/Si0.91Ge0.09 andSi9/Ge6 quantum dots
Autor: C. M. Sotomayor Torres, Evan H. C. Parker, H. Presting, R. A. Kubiak, Horst Kibbel, Y.S. Tang, Terry E. Whall
Publikováno v: Journal of Electronic Materials. 24:99-106
Nanometer-scale quantum dots based on a series of Si/Si0.91Ge0.09 strained layer superlattices and a Si9/Ge6 strain-symmetrized superlattice were fabricated using electron beam lithography and reactive ion etching. They were investigated by photolumi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9eebb42ad10c4ec22045cfc4a6a03726
https://doi.org/10.1007/bf02659629
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5
Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy
Autor: I. D. Hawkins, J. C. Brighten, Anthony R. Peaker, Terry E. Whall, Evan H. C. Parker, R. A. Kubiak
Publikováno v: Journal of Applied Physics. 76:4237-4243
Deep level distributions have been investigated in B‐doped Si/Si1−xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ebebae9f330e4b9e3aa99288b211f0f
https://doi.org/10.1063/1.357332
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6
Scattering mechanisms affecting hole transport in remote‐doped Si/SiGe heterostructures
Autor: Evan H. C. Parker, Terry E. Whall, Michael J. Kearney, R. A. Kubiak, C. J. Emeleus, D. W. Smith
Publikováno v: Journal of Applied Physics. 73:3852-3856
Boron modulation‐doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two‐dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2–5×1011 cm−2 and a typical mobil
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b1c9adac731260f3a4e51838c980871
https://doi.org/10.1063/1.352895
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7
Observation of novel transport phenomena in aSi0.8Ge0.2two-dimensional hole gas
Autor: Michael J. Kearney, R. A. Kubiak, C. J. Emeleus, Evan H. C. Parker, Terry E. Whall, D. W. Smith, N. L. Mattey
Publikováno v: Physical Review B. 47:10016-10019
We report measurements of the magnetoresistance and Hall coefficient of a two-dimensional hole gas defined at a remote-doped Si/Si 0.8 Ge 0.2 heterojunction. In addition to the usual quantum interference and interaction corrections, one can clearly r
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e414719cc81b6b67099e1b0d0bda0c57
https://doi.org/10.1103/physrevb.47.10016
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9
The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE
Autor: Evan H. C. Parker, Terry E. Whall, P. J. Phillips, R. A. Kubiak, J. C. Brighten, Anthony R. Peaker, I. D. Hawkins
Publikováno v: Thin Solid Films. 222:116-119
Si/Si0.9Ge0.1 heterostructures have been analyzed using the Capacitance-Voltage (C-V) technique described by Kroemer. A valence band offset of approximately 70 ± 10 meV was deduced, in good agreement with that predicted by other methods. The signifi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a87a3eb47422b83507526728c52e4b6
https://doi.org/10.1016/0040-6090(92)90050-l
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10
SIMS response functions for MBE grown delta layers in silicon
Autor: Mark Dowsett, H. S. Fox, R. D. Barlow, S.M. Newstead, R. A. Kubiak
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 72:442-446
SIMS response functions and depth resolution parameters have been measured using O 2 + primary ions at normal incidence and 45°, for a range of silicon MBE grown epilayers containing ultrathin buried layers or “deltas” doped with B. Growth and d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67af0009e62ddcaa57afb11b9aca1078
https://doi.org/10.1016/0168-583x(92)95140-m
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