Zobrazeno 1 - 10
of 28
pro vyhledávání: '"R. A. Kant"'
Autor:
B R Vijaykumar, R Sai Kant, C Rajendran, Swathi U Lekshmi, Sundar Keerthana, Anita Mahadevan, S K Shankar, R S Jayshree
Publikováno v:
Annals of Indian Academy of Neurology, Vol 21, Iss 4, Pp 250-255 (2018)
Context: Published data on genetic characterization of Toxoplasma gondii (T.gondii) from clinical cases of toxoplasmosis from India is lacking. Aims: The present study was aimed at identifying genetic types of T. gondii in fatal cases of cerebral tox
Externí odkaz:
https://doaj.org/article/d2c63387c1d045048443e245f4eb2620
Autor:
Swathi U. Lekshmi, R. S. Jayshree, R. Sai Kant, Chellaiah Rajendran, Anita Mahadevan, S K Shankar, B.R. Vijaykumar, D. Vaigundan
Publikováno v:
Infection, genetics and evolution : journal of molecular epidemiology and evolutionary genetics in infectious diseases. 39
Toxoplasma gondii (T.gondii) infection can be devastating in the immunodeficient causing high morbidity and mortality. Due to limited availability of both diagnostic facilities and Highly Active Antiretroviral Therapy (HAART), toxoplasmosis continues
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0b772c25d604e48473a93c105b1494e
https://pubmed.ncbi.nlm.nih.gov/26802459
https://pubmed.ncbi.nlm.nih.gov/26802459
Autor:
V. E. Tarabrin, R. A. Kantur
Publikováno v:
Московский журнал международного права, Vol 0, Iss 2, Pp 61-77 (2021)
INTRODUCTION. The article examines various aspects of the international legal qualification of offences committed against internationally protected persons. The analysis of different elements of corpus delicti was laid at the heart of the study: name
Externí odkaz:
https://doaj.org/article/f6be92311df74dfaa7201415842d20ea
Publikováno v:
Journal of Tribology. 113:214-219
Ion Beam Assisted Deposition (IBAD) provides the ability to control the micro-structure, and therefore the properties of thin films and coatings. This paper describes the tribological properties of TiN coatings prepared by reactive IBAD using evapora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef59ce2b4e85de0606a74d357e281bdb
https://doi.org/10.1115/1.2920592
https://doi.org/10.1115/1.2920592
Publikováno v:
Surface Engineering. 7:319-326
There is a continuing requirement for improved bearing performance for both commercial and military applications. Service temperatures are increasing steadily due to increased power requirements and corrosion of components remains a major concern as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea332bf9e2dc552c7caf950074ba8fc
https://doi.org/10.1179/sur.1991.7.4.319
https://doi.org/10.1179/sur.1991.7.4.319
Autor:
B. D. Sartwell, R. A. Kant
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:861-867
Simultaneous Auger electron spectroscopy and ion bombardment were used to study the influence of ion bombardment on the amount of nitrogen accumulated on a Ti surface in a low‐pressure nitrogen atmosphere. The nitrogen level was measured as a funct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b72010f4fdfeeec42a68aafd168b73
https://doi.org/10.1116/1.576931
https://doi.org/10.1116/1.576931
Publikováno v:
MRS Proceedings. 223
The dominant factors governing reactive ion etching of Si, SiO, and SiO2 thin films during bombardment with energetic Ar ions in a Cl atmosphere were investigated. Etch rates were determined in-situ by measuring weight loss as a function of ion fluen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a45f3c1321133a134270c7b22b4837a
https://doi.org/10.1557/proc-223-109
https://doi.org/10.1557/proc-223-109
Autor:
Kenneth S. Grabowski, R. A. Kant
Publikováno v:
MRS Proceedings. 187
Epitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdcc894a3ce4e9b1b134cd44d951bd5
https://doi.org/10.1557/proc-187-237
https://doi.org/10.1557/proc-187-237
Autor:
T. P. Smith, P. J. Stiles, R. Hull, W. M. Augustnyiak, Dale C. Jacobson, R. A. Kant, W. L. Brown
Publikováno v:
Journal of Applied Physics. 58:193-196
We have studied pulsed ruby laser and furnace annealing of high‐dose (D>1017 N/cm2) 50‐keV nitrogen‐implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f0ffd297cbbaa03c87bf7fecd74f05
https://doi.org/10.1063/1.335707
https://doi.org/10.1063/1.335707
Publikováno v:
Journal of Applied Physics. 50:214-222
The formation and evolution of AlSb precipitates in Sb‐implanted Al has been investigated as a function of temperature, flux, and fluence. Implant temperatures of 23–300 °C, fluxes of 6×1011 to 1.3×1013 Sb cm−2 sec−1, and fluences of 5×10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78db08df134e764f5f3a3b4abd96d556
https://doi.org/10.1063/1.325702
https://doi.org/10.1063/1.325702