Zobrazeno 1 - 10
of 65
pro vyhledávání: '"R. A. Höpfel"'
Autor:
G. Zandler, Karl Unterrainer, Gottfried Strasser, Rudolf Bratschitsch, W. Fischler, R. A. Höpfel
Publikováno v:
Semiconductor Science and Technology. 15:813-817
Coherent plasmon-phonon coupled modes in intrinsic bulk GaAs are investigated for excitation energies around the band gap. The frequencies of the coherent terahertz plasmons lie on the lower branch of the plasmon-phonon coupled modes. Their damping t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bead52fe1733b91fbdf239e5c7390510
https://doi.org/10.1088/0268-1242/15/8/305
https://doi.org/10.1088/0268-1242/15/8/305
Publikováno v:
physica status solidi (b). 204:102-105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49702034b6494d1d8b1d30e071a8ce03
https://doi.org/10.1002/1521-3951(199711)204:1<102::aid-pssb102>3.0.co
https://doi.org/10.1002/1521-3951(199711)204:1<102::aid-pssb102>3.0.co
Publikováno v:
Physical Review B. 55:R7311-R7314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715a00c549c46281017ecc86496f6658
https://doi.org/10.1103/physrevb.55.r7311
https://doi.org/10.1103/physrevb.55.r7311
Publikováno v:
Physical Review B. 53:12581-12584
We report the evidence of occupation inversion in time average within the continuous band structure of the semiconductor InP. Ultrafast carrier trapping and recombination (\ensuremath{\tau}\ensuremath{\approxeq}1\ifmmode\times\else\texttimes\fi{}${10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4291c7be903a32c42e54b53fc77b9eb6
https://doi.org/10.1103/physrevb.53.12581
https://doi.org/10.1103/physrevb.53.12581
Publikováno v:
Solid-State Electronics. 37:1163-1166
The photoluminescence of GaAs microcrystallites with average sizes in the range of 0.35–1.3 μm has been studied experimentally. The observed spectral blue-shift and line-broadening of the luminescence are explained by spectral enhancement and inhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49fb7c2107e3ddd1ca4e5b202184c8cc
https://doi.org/10.1016/0038-1101(94)90379-4
https://doi.org/10.1016/0038-1101(94)90379-4
Publikováno v:
Applied Physics A Solids and Surfaces. 57:261-265
The second-harmonic generation (SHG) in a layered system consisting of Ag-islands/SiOx spacer/Ag is investigated. The efficiency of this process depends strongly on the mass thickness d of the dielectric SiOx. An enhancement by a factor of 80 of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e908fffa88ed3953be910c78017385
https://doi.org/10.1007/bf00332600
https://doi.org/10.1007/bf00332600
Publikováno v:
Physica Scripta. :459-463
We review our latest experiments on femtosecond time-resolved studies of plasma excitations in metallic island films, where second order autocorrelation of femtosecond laser pulses allows the direct experimental determination of the lifetime of colle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ef6bbb882d1cc838574f1ba78eabe2
https://doi.org/10.1088/0031-8949/1993/t49b/014
https://doi.org/10.1088/0031-8949/1993/t49b/014
Autor:
K.F. Lamprecht, Reinhard Lackner, J. Baldauf, K. Überbacher, Richard Tessadri, S. Juen, R. A. Höpfel
Publikováno v:
Superlattices and Microstructures. 11:181-184
A new method for the production and separation of semiconductor micro- and nanocrystallites is reported. We obtain suspensions with crystallites in a size range from several micrometers down to tens of nanometers by wet micromilling of monocrystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78396b426ddf3b933790f5408629dc0e
https://doi.org/10.1016/0749-6036(92)90248-4
https://doi.org/10.1016/0749-6036(92)90248-4
Publikováno v:
physica status solidi (b). 204:64-66
We report on the observation of coherent THz plasmons in GaAs using the femtosecond time-resolved pump–probe technique. The samples are GaAs/AlGaAs modulation doped single heterostructures with a depletion field below the 2D-channel in the intrinsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b23240a9de91adbb04d23b29dd57dd7
https://doi.org/10.1002/1521-3951(199711)204:1<64::aid-pssb64>3.0.co
https://doi.org/10.1002/1521-3951(199711)204:1<64::aid-pssb64>3.0.co
Publikováno v:
Applied Physics Letters. 68:2778-2780
The transient reflectivity of GaAs Schottky diodes is measured by femtosecond time resolved pump‐probe experiments. The measured reflectivity for photon energies near the band gap reveals transient quasioscillatory behavior with frequencies up to 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3998253488500e217e97c9309c16768
https://doi.org/10.1063/1.116604
https://doi.org/10.1063/1.116604