Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R. A. Ditizio"'
Autor:
J. F. Rembetski, P. I. Mikulan, Osama O. Awadelkarim, Stephen J. Fonash, T. Gu, Y. D. Chan, R. A. Ditizio
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1332-1336
We explore the effects of polycrystalline Si overetches on the Si substrate in the SiO2/Si materials system. Conventional reactive ion etching (RIE) and magnetically enhanced RIE (MERIE) with Cl2 or HBr‐based chemistries are used. The introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926861dcc2aa7bac055f149d63d31c06
https://doi.org/10.1116/1.578549
https://doi.org/10.1116/1.578549
Autor:
P. Aum, Y. D. Chan, K. A. Reinhardt, R. A. Ditizio, Stephen J. Fonash, T. Gu, J. F. Rembetski, Osama O. Awadelkarim
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1323-1326
The effects of reactive ion etching on the properties of SiO2 and SiO2–Si interfaces have been examined for the case of polycrystalline Si overetch exposures. HBr/Cl2‐based polycrystalline Si etch chemistry was used and damage effects for thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f345359efb8d2f0bc87a44e971817cb7
https://doi.org/10.1116/1.578547
https://doi.org/10.1116/1.578547
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:59-65
Hydrogen plasmas generated by electron cyclotron resonance currently provide the most efficient plasma exposure technique available for passivating the grain boundaries of polycrystalline silicon. In this report, we show that careful optimization may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e9dde59e493b38cb2ec67ca2d9aa5a
https://doi.org/10.1116/1.578150
https://doi.org/10.1116/1.578150
Publikováno v:
IEEE Electron Device Letters. 15:85-87
Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF/sub 3/-based chemistries were studied using SiO/sub 2//Si structures. The process-parameter space for the etches consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1abd4e8b8ef2eb66c25089613d042a14
https://doi.org/10.1109/55.285394
https://doi.org/10.1109/55.285394
Autor:
T. Gu, Osama O. Awadelkarim, P. I. Mikulan, Stephen J. Fonash, R. A. Ditizio, Y.D. Chan, J.F. Rembetski
Publikováno v:
IEEE Electron Device Letters. 14:167-169
The authors explore the silicon substrate damage produced by Cl/sub 2/- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline-Si/SiO/sub 2//single-crystal-Si structures. The damage-caused traps, exami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f593d83df7ea307a070e6abb0d29cb08
https://doi.org/10.1109/55.215162
https://doi.org/10.1109/55.215162
Autor:
P. I. Mikulan, Osama O. Awadelkarim, R. A. Ditizio, Y.D. Chan, Stephen J. Fonash, K. A. Reinhardt, T. Gu
Publikováno v:
Applied Physics Letters. 62:958-960
Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron‐doped Si substrates. Etch‐induced gap states in the substrate are monitored using deep‐level transient spectroscopy. The dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555c4ba99e2dcde2f2b562b532e0129e
https://doi.org/10.1063/1.108532
https://doi.org/10.1063/1.108532
Publikováno v:
Applied Physics Letters. 61:2326-2328
Oxygen‐based electron cyclotron resonance (ECR) plasma etching of boron doped homoepitaxial diamond films with no de bias has been achieved. The process was developed to the point where it can provide a uniform and reproducible etching procedure th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c645dd41ec9db3cc2674254cc6de379c
https://doi.org/10.1063/1.108232
https://doi.org/10.1063/1.108232
Publikováno v:
Applied Physics Letters. 56:1140-1142
Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin‐film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a72653187e409965775dc9e9bcb445b
https://doi.org/10.1063/1.102543
https://doi.org/10.1063/1.102543
Autor:
R. A. Ditizio, Stephen J. Fonash, T. Gu, J.F. Rembetski, Osama O. Awadelkarim, Y.D. Chan, P. I. Mikulan, Robert W. Collins, K. A. Reinhardt
Publikováno v:
MRS Proceedings. 259
Surface conditioning issues arising from pattern transfer utilizing plasma etching are discussed. Two situations are considered: one in which an oxide on a silicon substrate is exposed to a plasma etching environment and one in which a silicon substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d99e33a580e2277d1c26dfbe44fba69
https://doi.org/10.1557/proc-259-55
https://doi.org/10.1557/proc-259-55
Autor:
J. Ruzyllo, R. A. Ditizio, Osama O. Awadelkarim, Robert W. Collins, Stephen J. Fonash, T. Gu, H. J. Leary
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:567
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron‐enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a498244863baf348e12ea9e8544b497a
https://doi.org/10.1116/1.587391
https://doi.org/10.1116/1.587391