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Publikováno v:
Physical Review B. 62:4501-4510
Infrared reflectivity measurements ~200–5000 cm) and transmittance measurements ~500–5000 cm) have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e14486618fca5fee0ab4b3f786115a4
https://doi.org/10.1103/physrevb.62.4501
https://doi.org/10.1103/physrevb.62.4501
Autor:
Jan Petzelt, M. P. Moret, V. Porokhonskyy, Zoe H. Barber, S. Kamba, Ashish Garg, R. Zallen, Jan Pokorny
Publikováno v:
Applied Physics Letters. 81:1056-1058
Polarized microscope observation of ferroelastic domains in a SrBi2Ta2O9 (SBT) single crystal reveals the presence of domains up to Tc1≃770 K, which supports the ferroelasticity and Amam symmetry of the intermediate phase between ferroelectric and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b8cba157661a1093ae27cab88f4423
https://doi.org/10.1063/1.1498005
https://doi.org/10.1063/1.1498005
Publikováno v:
Semiconductor Science and Technology. 7:1149-1154
Raman scattering by coupled plasmon-phonon modes is studied with Si-doped InAs epilayers grown by MBE with carrier concentrations from 7.5*1017 cm-3 to 4*1019 cm-3. Unexpectedly, an unscreened LO line is observed throughout the whole carrier concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daec656e3b583fff64786558f4e2c2a8
https://doi.org/10.1088/0268-1242/7/9/002
https://doi.org/10.1088/0268-1242/7/9/002
Autor:
A. G. de Oliveira, A. G. Norman, Ian T. Ferguson, Y B Li, S S Dosanjh, R A Stradling, R Zallen
Publikováno v:
Semiconductor Science and Technology. 7:567-570
Phonon energies in InAs1-xSbx ternary alloys, grown on GaAs by molecular beam epitaxy, have been studied by Raman scattering. The microstructure for this alloy system depends strongly on the growth temperature. For growth temperatures above 400 degre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dff028a848abb8607a596365401d8d51
https://doi.org/10.1088/0268-1242/7/4/022
https://doi.org/10.1088/0268-1242/7/4/022
Autor:
R. J. Gonzalez, R. Zallen
Publikováno v:
Amorphous Insulators and Semiconductors ISBN: 9789048147915
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f68ada404b22451aef684db05f5f36
https://doi.org/10.1007/978-94-015-8832-4_18
https://doi.org/10.1007/978-94-015-8832-4_18
Autor:
R. Zallen
Publikováno v:
High Pressure Research. 24:117-118
Crystalline As2S3 (orpiment) is a layered-structure semiconductor whose optical properties, under ambient conditions, are determined by its diperiodic layer symmetry. We have investigated the effec...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36204c5aa9bfe2148a8a7e2348f6668d
https://doi.org/10.1080/08957950410001661945
https://doi.org/10.1080/08957950410001661945
Publikováno v:
The Implant Society : [periodical]. 5(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1e9ad3661652e7c605ece0cc0b0f83a2
https://pubmed.ncbi.nlm.nih.gov/9571855
https://pubmed.ncbi.nlm.nih.gov/9571855
Publikováno v:
Physics and Chemistry of Finite Systems: From Clusters to Crystals ISBN: 9789401726474
Careful Raman-scattering studies were carried out on AlO(OH) gels prepared by the Yoldas technique, using the position and lineshape of the characteristic boehmite band near 360 cm−1 as a marker of the structural progress of the sol-gel reaction. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d715e6e086092d1bc5d2c6fa2d1ae0
https://doi.org/10.1007/978-94-017-2645-0_120
https://doi.org/10.1007/978-94-017-2645-0_120
Autor:
W. Songprakob, J. Gebauer, Eicke R. Weber, A. J. SpringThorpe, Dmitri Lubyshev, R. W. Streater, Petra Specht, R. Zallen, R. Zhao, W. K. Liu, S. Vijarnwannaluk
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:1594
Carbon-doped GaAs and InP grown at low temperatures by molecular-beam epitaxy contain a high concentration of antisite defects which gives rise to ultrafast carrier trapping time and desirable radiation-hard properties. The use of CBr4 as the dopant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49dda68829071a573a29fe6c0caa7a3
https://doi.org/10.1116/1.591434
https://doi.org/10.1116/1.591434