Zobrazeno 1 - 10
of 94
pro vyhledávání: '"R Wacquez"'
Publikováno v:
New Journal of Physics, Vol 16, Iss 6, p 063036 (2014)
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are gener
Externí odkaz:
https://doaj.org/article/60df1479f3894c148d09d70809879b4f
Publikováno v:
2022 25th Euromicro Conference on Digital System Design (DSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4d2e0fb9d3b9262fa04f90f8d3cf46
https://doi.org/10.1109/dsd57027.2022.00077
https://doi.org/10.1109/dsd57027.2022.00077
Autor:
Lorenzo Ciampolini, B. Blampey, M. Pezzin, M. Diallo, Jean-Frederic Christmann, Bastien Giraud, Simone Bacles-Min, M. Le Coadou, F. Lepin, J.-P. Noel, R. Wacquez
Publikováno v:
ESSCIRC
IEEE
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp. 455-458, ⟨10.1109/ESSCIRC53450.2021.9567885⟩
IEEE
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp. 455-458, ⟨10.1109/ESSCIRC53450.2021.9567885⟩
International audience; On-chip memories, and in particular SRAMs, are among the most critical components in terms of data security because they might contain sensitive data such as secret keys. Whenever a tampering event is detected, one should be a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf86ce9c184f5b1a88e17985c349ee89
https://doi.org/10.1109/esscirc53450.2021.9567885
https://doi.org/10.1109/esscirc53450.2021.9567885
Akademický článek
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Autor:
R. Wacquez, B. Dieny, G. Di Pendina, M. Kharbouche-Harrari, D. Aboulkassimi, J-M. Portal, Jérémy Postel-Pellerin
Publikováno v:
ISCAS
2019 IEEE International Symposium on Circuits and Systems (ISCAS)
2019 IEEE International Symposium on Circuits and Systems (ISCAS), May 2019, Sapporo, Japan. pp.1-5, ⟨10.1109/ISCAS.2019.8702734⟩
2019 IEEE International Symposium on Circuits and Systems (ISCAS)
2019 IEEE International Symposium on Circuits and Systems (ISCAS), May 2019, Sapporo, Japan. pp.1-5, ⟨10.1109/ISCAS.2019.8702734⟩
International audience; Internet of Things (IoT) applications deployment relies on low-power circuits. Nowadays, on top of power consumption, security concern has become a real issue. LightWeight Cryptography (LWC) has been developed to answer this c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a46a83e0dcbd24622d94184fc67a8244
https://doi.org/10.1109/iscas.2019.8702734
https://doi.org/10.1109/iscas.2019.8702734
Autor:
X. Jehl, B. Voisin, T. Charron, P. Clapera, S. Ray, B. Roche, M. Sanquer, S. Djordjevic, L. Devoille, R. Wacquez, M. Vinet
Publikováno v:
Physical Review X, Vol 3, Iss 2, p 021012 (2013)
Electron pumps capable of delivering a current higher than 100 pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. We present here single-island hybrid metal-semiconductor
Externí odkaz:
https://doaj.org/article/ef9e00e358904fb9a176404b51b158e4
Autor:
Rana Alhalabi, G. Di Pendina, R. Wacquez, D. Aboulkassimi, Jérémy Postel-Pellerin, Guillaume Prenat, M. Kharbouche-Harrari, Ioan Lucian Prejbeanu, Etienne Nowak
Publikováno v:
XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), Nov 2018, Lyon, France
HAL
DCIS
XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), Nov 2018, Lyon, France
HAL
DCIS
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power applications, requiring a decent level of performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1b4f6377b08ff0df510c6aa87688e22
https://hal.archives-ouvertes.fr/hal-01982788
https://hal.archives-ouvertes.fr/hal-01982788
Autor:
J-M. Portal, D. Aboulkassimi, Ricardo C. Sousa, M. Kharbouche-Harrari, Marc Bocquet, Jérémy Postel-Pellerin, R. Delattre, G. Di Pendina, R. Wacquez
Publikováno v:
2018 IEEE 24th International Symposium on
Testing And Robust System Design (IOLTS)
Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. pp.243-244, ⟨10.1109/IOLTS.2018.8474088⟩
Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. ⟨10.1109/IOLTS.2018.8474088.⟩
IOLTS
Testing And Robust System Design (IOLTS)
Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. pp.243-244, ⟨10.1109/IOLTS.2018.8474088⟩
Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. ⟨10.1109/IOLTS.2018.8474088.⟩
IOLTS
International audience; The Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been identified, by the International Technology Roadmap for Semiconductors (ITRS), as one of the most promising emerging technology. Different works handle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78a24ab54f71b9134a5105299e0050af
https://hal.science/hal-01976697
https://hal.science/hal-01976697
Autor:
Pierre Morin, E. Augendre, C. Le Royer, Joel Kanyandekwe, N. Bernier, Y. Morand, B. Lherron, L. Grenouillet, Oliver Faynot, J. M. Hartmann, M. Celik, James Chingwei Li, Sylvain Maitrejean, B. De Salvo, F. Chafik, Nicolas Loubet, Hong He, R. Wacquez, S. Reboh, Aomar Halimaoui, Bruce B. Doris, Qing Liu, S. Pilorget, A. Bonnevialle
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P376-P381
Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration S. Maitrejean,a,z N. Loubet,b E. Augendre,a P. Morin,b S. Reboh,c N. Bernier,c R. Wacquez,a B. Lherron,b A. Bonnevialle,c,d Q. Liu,b J. M. Ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb79e1fac95c8554790af791fb631b31
https://doi.org/10.1149/2.0171509jss
https://doi.org/10.1149/2.0171509jss
Publikováno v:
IOLTS
The last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e78db52ca00fd09d12cc9c1a02f425
https://doi.org/10.1109/iolts.2017.8046202
https://doi.org/10.1109/iolts.2017.8046202