Zobrazeno 1 - 10
of 47
pro vyhledávání: '"R W, Terhune"'
Publikováno v:
Physical Review B. 43:14574-14580
Absorption data are presented for 2-4-monolayer InAs/GaAs single quantum wells obtained at 77 K using a polarization-based measurement technique. The special contribution of the optical loss features arising from bulk GaAs was minimized using the pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f9ae26ab84c4783b7505e6dfa67a984
https://doi.org/10.1103/physrevb.43.14574
https://doi.org/10.1103/physrevb.43.14574
Autor:
F J, Grunthaner, A J, Ricco, M A, Butler, A L, Lane, C P, McKay, A P, Zent, R C, Quinn, B, Murray, H P, Klein, G V, Levin, R W, Terhune, M L, Homer, A, Ksendzov
Publikováno v:
Analytical chemistry. 67(19)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::635f205cd67ecf0574b0fae25f95d2c0
https://pubmed.ncbi.nlm.nih.gov/11536721
https://pubmed.ncbi.nlm.nih.gov/11536721
Autor:
T. W. Kenny, T. R. VanZandt, Michael H. Hecht, R. W. Terhune, A. L. Lane, R. E. Salder, Frank J. Grunthaner, S. Boumsellek, M. L. Homer, Michael A. Butler, Antonio J. Ricco, A. Ksendzov
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6509f2dcbb7caea5cb797804636d3efa
https://doi.org/10.7567/ssdm.1994.a-6-1
https://doi.org/10.7567/ssdm.1994.a-6-1
Autor:
R. W. Terhune
Publikováno v:
Optical Society of America Annual Meeting.
Since coming to JPL four years ago, I have been concerned with space applications of focal plane array detectors and their fabrication with molecular beam epitaxy. I have chosen to talk about a fascinating part of this work, device structures with mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4710a5e75a56f15e22d55749f2609df0
https://doi.org/10.1364/oam.1992.waa1
https://doi.org/10.1364/oam.1992.waa1
Publikováno v:
Physical review. B, Condensed matter. 44(3)
Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::715ecde65cbe141551ae7b8feda51d4d
https://pubmed.ncbi.nlm.nih.gov/9999621
https://pubmed.ncbi.nlm.nih.gov/9999621
Autor:
R. W. Terhune, Daniel H. Rich, Frank J. Grunthaner, S. M. Vernon, Hongen Shen, T. M. Dixon, A. Ksendzov, B. A. Wilson, Mitra Dutta
Publikováno v:
Physical review. B, Condensed matter. 43(8)
The strain-induced splitting of the heavy-hole (hh) and light-hole (lh) valence bands for 4-microns thick GaAs/Si is examined on a microscopic scale using linear polarized-cathodoluminescence imaging and spectroscopy. The energies and intensities of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31269e2eec72a919fd01dc024fa6dd56
https://pubmed.ncbi.nlm.nih.gov/9998143
https://pubmed.ncbi.nlm.nih.gov/9998143
Autor:
B. A. Wilson, Frank J. Grunthaner, R. W. Terhune, Daniel H. Rich, John K. Liu, Thomas George, A. Ksendzov, Fred H. Pollak, Y. S. Huang
Publikováno v:
MRS Proceedings. 221
Three InAs/GaAs single quantum wells of two-, three-, and four-monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d0e69c1f1b86b3c7ccb76c7c71c256
https://doi.org/10.1557/proc-221-459
https://doi.org/10.1557/proc-221-459
Autor:
T. N. Krabach, True-Lon Lin, A. Ksendzov, R. W. Terhune, E. W. Jones, Robert W. Fathauer, S. M. Dejewski, J. Maserjian
Publikováno v:
MRS Proceedings. 216
There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3beb6218060821f23c43294095526d
https://doi.org/10.1557/proc-216-523
https://doi.org/10.1557/proc-216-523
Autor:
Richard H. Pantell, R. W. Terhune
Publikováno v:
Applied Physics Letters. 30:265-268
The characteristics of the radiation from channeled relativistic electrons and positrons are discussed and model calculations carried out. Radiation near 2.5 keV associated with transitions etween the 2 p→1s eigenstates of 2‐MeV electrons channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0592729d61a6e868ae58e0054f9888
https://doi.org/10.1063/1.89379
https://doi.org/10.1063/1.89379
Publikováno v:
Journal of Molecular Spectroscopy. 81:316-326
Diode laser measurements of the ν10 + ν11 (ltot = ±2) perpendicular band of cyclopropane have led to the assignments of roughly 600 lines in the 1880–1920-cm−1 region. Most of the spectra were recorded and stored in digital form using a rapid-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb49cd05768ed0e1a0b1dc31b3fffd51
https://doi.org/10.1016/0022-2852(80)90195-2
https://doi.org/10.1016/0022-2852(80)90195-2