Zobrazeno 1 - 5
of 5
pro vyhledávání: '"R T Uspazhiev"'
Autor:
A. Kh. Matiyev, R T Uspazhiev, A M Gachaev, A M Bagov, B M Khamkhoev, T Ah Matieva, Kh S-G Chapanov, I A Sysoev
Publikováno v:
Journal of Physics: Conference Series. 1753:012077
The method of long-wave spectroscopy made it possible to study the IR reflection spectra of layered single crystals β-Tl1-xCuxInS2 (0≤X≤0.015) in in the frequency range of 40-500 cm−1 and the temperature range of 84 ¸ 300 K. It was shown that
Autor:
B M Khamkhoev, A. Kh. Matiyev, T A Matieva, A M Gachaev, R M Katsiev, R T Uspazhiev, A M Bagov
Publikováno v:
Journal of Physics: Conference Series. 1753:012078
The anisotropy of the refractive index and the electro-optical effect in Tl1-xCuxGaSe2(0≤X≤0/02) crystals were studied. Refractive indices were shown to rise as they approach their own absorption band. The electro-optical effect in TlGaSe2 crysta
Autor:
A. V. Sankin, R. H. Dadashev, V. I. Altukhov, D. Z. Elimkhanov, R. T. Uspazhiev, M. A. A. Gudaev, D. K. Sysoev
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 905:012017
The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been dev
Publikováno v:
Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018).
Publikováno v:
Inorganic Materials. 51:665-667
Phase equilibria in the TlGaSe2–AgGaSe2 system have been studied for the first time over the entire composition range using differential thermal analysis, X-ray diffraction, and electrical conductivity measurements. The extents of the TlGaSe2-based