Zobrazeno 1 - 10
of 79
pro vyhledávání: '"R Stivers"'
Autor:
Benjamin R. Irvin, David C. Klonoff, Annette L. Clark, Erika B. Ammirati, Carole R. Stivers, Joel M. Blatt, Thomas G. Cole, Richard M. Bergenstal, Nancy J.v. Bohannon
Publikováno v:
Point of Care: The Journal of Near-Patient Testing & Technology. 5:116-120
A1C can be measured by portable point-of-care methods that might offer advantages compared with conventional sampling of venous blood for eventual laboratory testing. In a 2-part study, we compared the performance and ease of use of A1C measurement w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182ed3dd384810d23b7a27104b269d25
https://doi.org/10.1097/01.poc.0000232578.91019.03
https://doi.org/10.1097/01.poc.0000232578.91019.03
Autor:
James Alexander Liddle, Sherry L. Baker, Ted Liang, Farhad Salmassi, Jeff C. Robinson, Eberhard Spiller, Alan R. Stivers, Paul B. Mirkarimi, D. G. Stearns, Deirdre L. Olynick
Publikováno v:
Journal of Nanoscience and Nanotechnology. 6:28-35
For many thin-film applications substrate imperfections such as particles, pits, scratches, and general roughness, can nucleate film defects which can severely detract from the coating's performance. Previously we developed a coat-and-etch process, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a91a8dde86dce221ce0aed884fd53c
https://doi.org/10.1166/jnn.2006.17901
https://doi.org/10.1166/jnn.2006.17901
Autor:
Ted Liang, Paul B. Mirkarimi, D. G. Stearns, Farhad Salmassi, Eberhard Spiller, Jeff C. Robinson, Alan R. Stivers, James Alexander Liddle, Sherry L. Baker
Publikováno v:
Mirkarimi, P.; Spiller, E.; Baker, S.; Robinson, J.; Stearns, D.; Liddle, J.A.; et al.(2004). Advancing the ion beam thin film planarization process for the smoothing of substrate particles. Microelectronic Engineering, 77(3/4/2008). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/7sq7q296
For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db7fa7ef6372fecedda7d976eda4d188
https://doi.org/10.1016/j.mee.2004.12.098
https://doi.org/10.1016/j.mee.2004.12.098
Autor:
P. B. Mirkarimi, Stefan P. Hau-Riege, Anton Barty, Alan R. Stivers, Vernon E. Robertson, Ted Liang, Michael A. Coy, Masaaki Mita, Sherry L. Baker
Publikováno v:
Journal of Applied Physics. 96:6812-6821
Phase defects that introduce errors in the printed image are one of the major yield limiters for reticles in extreme-ultraviolet lithography. The basis for a reticle is a mask blank, consisting of an ultra-low-expansion substrate and a reflective mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed21965425e1af07fc42c8fdc45a0efe
https://doi.org/10.1063/1.1812826
https://doi.org/10.1063/1.1812826
Akademický článek
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Autor:
Sanjay Goyal, Michael L. Leeson, Manish Chandhok, Jan Hermans, Steven L. Carson, Marilyn Kamna, Seh-Jin Park, Guojing Zhang, Tod A. Laursen, Alan Myers, Alan R. Stivers, Sanjay Govindjee, Gian Lorusso, Gerd Brandstetter, Eric Hendrickx, Fabian C. Martinez
Publikováno v:
Alternative Lithographic Technologies.
EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047f392a3a1419ed816bce5f4cda69ec
https://doi.org/10.1117/12.814428
https://doi.org/10.1117/12.814428
Autor:
Nathan Wilcox, Chuan Hu, Seh-Jin Park, Guojing Zhang, Marilyn Kamna, Kamgmin Hsia, Fabian C. Martinez, Chandhok Manish, Alan R. Stivers
Publikováno v:
Photomask Technology 2008.
Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938b1c8ff3369af7d62b872118fb9423
https://doi.org/10.1117/12.801542
https://doi.org/10.1117/12.801542
Autor:
Pei-yang Yan, Barry Lieberman, Ted Liang, Emily Y. Shu, Seh-Jin Park, Guojing Zhang, Ping Qu, Alan R. Stivers, Gilroy Vandentop, Sven Henrichs, Erdem Ultanir, Peter Sanchez
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24a465211f12bfefb302d0bae38c4db
https://doi.org/10.1117/12.728941
https://doi.org/10.1117/12.728941
Autor:
Seh-Jin Park, Guojing Zhang, Alan Myers, Gilroy Vandentop, Alan R. Stivers, Ted Liang, Patrick P. Naulleau
Publikováno v:
SPIE Proceedings.
Mask defect specifications not only are needed to ensure quality masks for acceptable resist patterning on wafers, but also are utilized as a common goal for tool development, noticeably for mask inspection and repair. Defect specifications are gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4b7919a42a8035fc2c34b90106e6ed
https://doi.org/10.1117/12.681844
https://doi.org/10.1117/12.681844
Autor:
Chang Ju Choi, Emily Y. Shu, Seh-Jin Park, Eric J. Lanzendorf, Guojing Zhang, Alan R. Stivers, Gilroy Vandentop, Kangmin Hsia, Peter Sanchez, Jeff Farnsworth, Manish Chandhok, Pei-yang Yan, Michael J. Leeson, Yan Du, Ted Liang
Publikováno v:
SPIE Proceedings.
It becomes increasingly important to have an integrated process for Extreme UltraViolet (EUV) mask fabrication in order to meet all the requirements for the 32 nm technology node and beyond. Intel Corporation established the EUV mask pilot line by in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ce9eec27d37275143d35d5e2bc55ef
https://doi.org/10.1117/12.681839
https://doi.org/10.1117/12.681839