NASTRA: accurate analysis of short tandem repeat markers by nanopore sequencing with repeat-structure-aware algorithm.

Autor: Ren, Zilin^1,2 (AUTHOR) zilin.ren@outlook.com, Zhang, Jiarong³ (AUTHOR), Zhang, Yixiang^1,2 (AUTHOR), Yang, Tingting³ (AUTHOR), Sun, Pingping² (AUTHOR), Xue, Jiguo⁴ (AUTHOR), Bo, Xiaochen⁴ (AUTHOR), Zhou, Bo¹ (AUTHOR) zilin.ren@outlook.com, Yan, Jiangwei³ (AUTHOR) zilin.ren@outlook.com, Ni, Ming⁴ (AUTHOR) zilin.ren@outlook.com

Publikováno v: Briefings in Bioinformatics. Nov2024, Vol. 25 Issue 6, p1-12. 12p.

Clinical Evaluation of a Rapid A1C Test (A1cNow) for Home Use

Autor: Benjamin R. Irvin, David C. Klonoff, Annette L. Clark, Erika B. Ammirati, Carole R. Stivers, Joel M. Blatt, Thomas G. Cole, Richard M. Bergenstal, Nancy J.v. Bohannon

Publikováno v: Point of Care: The Journal of Near-Patient Testing & Technology. 5:116-120

A1C can be measured by portable point-of-care methods that might offer advantages compared with conventional sampling of venous blood for eventual laboratory testing. In a 2-part study, we compared the performance and ease of use of A1C measurement w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::182ed3dd384810d23b7a27104b269d25
https://doi.org/10.1097/01.poc.0000232578.91019.03

Advancing the ion beam thin film planarization process for the smoothing of substrate particles

Autor: Ted Liang, Paul B. Mirkarimi, D. G. Stearns, Farhad Salmassi, Eberhard Spiller, Jeff C. Robinson, Alan R. Stivers, James Alexander Liddle, Sherry L. Baker

Publikováno v: Mirkarimi, P.; Spiller, E.; Baker, S.; Robinson, J.; Stearns, D.; Liddle, J.A.; et al.(2004). Advancing the ion beam thin film planarization process for the smoothing of substrate particles. Microelectronic Engineering, 77(3/4/2008). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/7sq7q296

For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db7fa7ef6372fecedda7d976eda4d188
https://doi.org/10.1016/j.mee.2004.12.098

"Pues que pase lo que Dios quiera": Strategies for Dealing with Emotional Discomfort in Undocumented Mexican Immigrants Living in the United States.

Autor: Moreno López, Midiam¹ (AUTHOR), Ramos Lira, Luciana¹ (AUTHOR) ramosl@imp.edu.mx, Saltijeral Méndez, Ma. Teresa¹ (AUTHOR), Wagner, Fernando² (AUTHOR), Berenzon Gorn, Shoshana¹ (AUTHOR)

Publikováno v: Salud Mental. Sep/Oct2024, Vol. 47 Issue 5, p229-237. 9p.

Compensation of overlay errors due to mask bending and non-flatness for EUV masks

Autor: Sanjay Goyal, Michael L. Leeson, Manish Chandhok, Jan Hermans, Steven L. Carson, Marilyn Kamna, Seh-Jin Park, Guojing Zhang, Tod A. Laursen, Alan Myers, Alan R. Stivers, Sanjay Govindjee, Gian Lorusso, Gerd Brandstetter, Eric Hendrickx, Fabian C. Martinez

Publikováno v: Alternative Lithographic Technologies.

EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::047f392a3a1419ed816bce5f4cda69ec
https://doi.org/10.1117/12.814428