Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R Sabet Dariani"'
Publikováno v:
Iranian Journal of Physics Research, Vol 18, Iss 3, Pp 491-491 (2018)
It is important to examine the factors that determine the properties of graphene. Various factors affect the properties of graphene nanosheets that can revolutionize the use of graphene. One such factor is ultrasonic waves, which have significant eff
Externí odkaz:
https://doaj.org/article/57ece7afebc14609bb1826130a2b10bd
Publikováno v:
Iranian Journal of Physics Research, Vol 4, Iss 1, Pp 91-98 (2003)
A theoretical study of resonant tunneling in multilayered GaAlAs/GaAs structures are presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::a8b48dde8d3d8eadde16ba8af1a46c15
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-202&slc_lang=en&sid=1
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-202&slc_lang=en&sid=1
Publikováno v:
Journal of Applied Sciences. 2:526-529
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8775063c90a92f711e61e00f5fb8f741
https://doi.org/10.3923/jas.2002.526.529
https://doi.org/10.3923/jas.2002.526.529
Publikováno v:
Iranian Journal of Physics Research, Vol 2, Iss 4, Pp 201-206 (2000)
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::38b0546595e8e90147920fd980fa27b5
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-3&slc_lang=en&sid=1
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-3&slc_lang=en&sid=1
Publikováno v:
Applied Surface Science. 92:198-203
SiL emission spectra, along with OK and CK emission, have been studied in many films of porous silicon (por-Si) when excited by direct electron bombardment. It is confirmed that there is a high oxygen content in the films, but only a small amount is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18a91e88f604a8aa557fffaf590c86b
https://doi.org/10.1016/0169-4332(95)00229-4
https://doi.org/10.1016/0169-4332(95)00229-4
Publikováno v:
Journal of Applied Physics. 75:8008-8011
Electroluminescence (EL) in gold‐coated porous silicon has been studied under pulse excitation. The room temperature EL is independent of ambient, unlike photoluminescence (PL). It decreases after 30 min annealing treatments, disappearing after abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0befc08742ab8e2d8a544694a1245acb
https://doi.org/10.1063/1.356539
https://doi.org/10.1063/1.356539
Publikováno v:
Journal of Applied Physics. 73:2321-2325
Samples of porous Si were prepared from p‐type, 10 Ω cm Si under 10 mA cm−2 anodization in aqueous HF (mostly 50%) for 5 min. These showed photoluminescence peaking at 835 nm at 10 K, with full width half maximum of 78 nm, the data showing littl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc857ee47c0a171406c531b76d6e69b
https://doi.org/10.1063/1.353136
https://doi.org/10.1063/1.353136
Autor:
D. Haneman, R. Sabet‐Dariani
Publikováno v:
Journal of Applied Physics. 76:1346-1348
High‐resolution scanning electron microscopy of porous silicon (PS) subjected to various annealing treatments in vacuum has revealed a spheroidal particlelike structure that only becomes clearly apparent after treatment at about 250 °C. This is co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a804c13368bfc5d1d395cb7ac78d2b
https://doi.org/10.1063/1.357801
https://doi.org/10.1063/1.357801
Autor:
D. Haneman, R. Sabet‐Dariani
Publikováno v:
Journal of Applied Sciences. 2:62-63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e75f85f94a63547104120266b73e8c
https://doi.org/10.3923/jas.2002.62.63
https://doi.org/10.3923/jas.2002.62.63
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