Zobrazeno 1 - 10
of 75
pro vyhledávání: '"R Söderström"'
The DEcay SPECtroscopy (DESPEC) setup for nuclear structure investigations was developed and commissioned at GSI, Germany in preparation for a full campaign of experiments at the FRS and Super-FRS. In this paper, we report on the first employment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::5aee6457403070563cabea055e89748a
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3220342
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3220342
Publikováno v:
Semiconductor Science and Technology. 7:337-343
The authors have investigated InSb layers grown heteroepitaxially on GaAs(100) substrates by molecular beam epitaxy (MBE). The dependence of electron mobilities on the MBE-growth conditions was investigated. The best room temperature mobility, 55000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830511614241f900d045761eedd9d24e
https://doi.org/10.1088/0268-1242/7/3/010
https://doi.org/10.1088/0268-1242/7/3/010
Autor:
L. Å. Hanson, T. Söderström, Janne Björkander, Petter Brandtzaeg, D. E. Nilssen, R Söderström, G. Karlsson, K. Theman
Publikováno v:
Clinical Immunology and Immunopathology. 61:S70-S77
IgG subclass deficiency (IgGSD) is difficult to define since reference materials vary between laboratories and the clinically relevant cut off levels for the various subclasses are not well known. The diagnosis of IgGSD should be based on more than o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39c6919d52ba70cc614688c63da2c171
https://doi.org/10.1016/s0090-1229(05)80040-6
https://doi.org/10.1016/s0090-1229(05)80040-6
Autor:
T. C. McGill, David Z. Ting, D. A. Collins, J. R. Söderström, Edward T. Yu, D. H. Chow, Y. Rajakarunanayake
Publikováno v:
Journal of Crystal Growth. 111:664-668
We report the experimental observation of negative differential resistance (NDR) at room temperature from a structure consisting of a single InAs(n)/GaSb(p) interface. The peak current densities ranged from 4.2×104 to 8.0×104 A/cm2 depending on how
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecde2fe5ab27c8af0231a7391eb644d2
https://doi.org/10.1016/0022-0248(91)91060-n
https://doi.org/10.1016/0022-0248(91)91060-n
Publikováno v:
Physical Review B. 43:4856-4862
We describe a photoluminescence study of a series of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures. We report the observation in double-barrier heterostructures of photoluminescence from the recombination of electrons at {ital X}-point lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::290cf7bf1bf3e76329f93fecd17fef9b
https://doi.org/10.1103/physrevb.43.4856
https://doi.org/10.1103/physrevb.43.4856
Autor:
T Söderström, L. Å. Hanson, Göran Karlsson, R Söderström, K Kett, L. Helgeland, D. E. Nilssen, Petter Brandtzaeg
Publikováno v:
Clinical and Experimental Immunology. 83:17-24
SUMMARYThe subclass distribution of IgG-producing immunocytes was examined by immunohistochemistry in nasal and rectal mucosa of infection-prone patients with untreated IgG subclass deficiencies. Biopsy specimens from the two sites were obtained in 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0c113fa06a4c130b8c2a072e0875cd8
https://doi.org/10.1111/j.1365-2249.1991.tb05581.x
https://doi.org/10.1111/j.1365-2249.1991.tb05581.x
Publikováno v:
Journal of Applied Physics. 68:1372-1375
A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::406ca45a926304b5bcdbbde77af9d6cc
https://doi.org/10.1063/1.346688
https://doi.org/10.1063/1.346688
Autor:
J. R. Söderström, Edward T. Yu, T.J. Watson, D. H. Chow, D. A. Collins, T. C. McGill, David Z. Ting
Publikováno v:
Superlattices and Microstructures. 8:455-458
We report on current transport through AlAs GaAs double quantum well heterostructures s a function of the width of the barrier separating the two wells. We compare the current-voltage characteristics of a 108 A quantum well with those of devices cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be4dee08926dcc6ede6554cc0da4819
https://doi.org/10.1016/0749-6036(90)90350-g
https://doi.org/10.1016/0749-6036(90)90350-g
Publikováno v:
Applied Physics Letters. 58:2291-2293
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs dio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0744945b2b8761b5195975e01c99d8
https://doi.org/10.1063/1.104902
https://doi.org/10.1063/1.104902
Autor:
C. D. Parker, J. Y. Yao, T. G. Andersson, Elliott R. Brown, L.J. Mahoney, J. R. Söderström, T. C. McGill
Publikováno v:
Applied Physics Letters. 58:275-277
High quality resonant tunneling diodes have been fabricated from the InAs/AlSb material system (InAs quantum well and cladding layers, AlSb barriers) on (100)GaAs substrates. A diode with a 6.4‐nm‐thick InAs quantum well and 1.5‐nm‐thick AlSb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c938be39989ab23f780a1f3a020a9e8e
https://doi.org/10.1063/1.104659
https://doi.org/10.1063/1.104659