Zobrazeno 1 - 10
of 98
pro vyhledávání: '"R Pasupathy"'
Publikováno v:
European Journal of Public Health. 32
The population in Latvia is aging. Independence in performing activities of daily living (ADL) is a core aspect of functioning, and the elderly frequently experience limitations in functioning. Little is known about the utilization of healthcare of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d89c0d1628a67cf2349dc40dc6ab873
https://doi.org/10.1093/eurpub/ckac131.579
https://doi.org/10.1093/eurpub/ckac131.579
Publikováno v:
Silicon. 14:1887-1894
Scaling of conventional MOSFET is hindered by the fact that the subthreshold swing cannot be reduced less than 60 mV/decade. Tunnel FET (TFET) is a promising candidate to replace conventional MOSFET due to its low subthreshold swing (SS), low OFF-sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b49fdcff6175b21c92c9e788ed59eb3
https://doi.org/10.1007/s12633-021-01018-2
https://doi.org/10.1007/s12633-021-01018-2
Autor:
B. Bindu, K. R. Pasupathy
Publikováno v:
IETE Journal of Research. 68:4120-4128
Single-event transient (SET) due to heavy-ion strike is a serious reliability concern for devices operated in radiation environment. Due to technology scaling, nodal capacitance decreases which inc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0167a08a2e2aad855e2cd5599bf52b3d
https://doi.org/10.1080/03772063.2020.1787875
https://doi.org/10.1080/03772063.2020.1787875
Multi-method analysis of gender differences in psychological distress among the elderly during COVID
As COVID swept through Europe, and the world, with high rates of illness and death, so did symptoms of anxiety, depression, post-traumatic stress disorder, stress, and psychological distress. This study examines the relationship between gender and ps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d2b05c74abfeb55e74a978946b6c0cb
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-493112
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-493112
Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 66:3710-3717
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing approaches that use double exponential and dual double-exponential current sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3dca78beb7509a18f3181198fd53167
https://doi.org/10.1109/ted.2019.2926883
https://doi.org/10.1109/ted.2019.2926883
Autor:
B. Bindu, K. R. Pasupathy
Publikováno v:
Microelectronics Reliability. 98:56-62
Single event transient (SET) due to heavy-ion strike is one of the serious reliability issues when the MOSFET is scaled down to advanced technology nodes. SOI technology is more immune to SET than bulk technology due to its smaller collection volume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5172288aa1df2f0beb475b781853098d
https://doi.org/10.1016/j.microrel.2019.04.018
https://doi.org/10.1016/j.microrel.2019.04.018
Akademický článek
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Publikováno v:
SILICON (1876990X); Apr2022, Vol. 14 Issue 5, p1887-1894, 8p
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
In this paper, the effects of Single Event Transients (SETs) due to heavy-ion strike in Double-Gate (DG) MOSFET is studied through simulations. Based on the understanding through simulation studies, an optimized device design is proposed to reduce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ade68e939f4403ac4037031656410b5
https://doi.org/10.1007/978-3-319-97604-4_91
https://doi.org/10.1007/978-3-319-97604-4_91