Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R N Il'in"'
Publikováno v:
Technical Physics. 54:783-789
The energy dependence of the total stopping cross section of 50- to 230-keV nitrogen ions in silicon (σ S (E)) is measured in order to develop the diagnostics of heavy impurities in films of a nanometer thickness by heavy ion backscattering (HIBS) s
Publikováno v:
Semiconductors. 41:487-490
This paper presents a short description of a thin film parameter study technique based on the analysis of energy and angular spectra of ions backscattered from the film with initial energies in the 50–250 keV range, as well as on the registration o
Publikováno v:
Physics of the Solid State. 45:1122-1127
The initial stages in the growth of BaxSr1−x TiO3 films on various dielectric substrates were studied using the middle-energy ion scattering spectroscopy, and the results obtained were used to analyze microdefects in the film. The character of film
Publikováno v:
Physics of the Solid State. 44:637-640
The motion of H+ and He+ ions with energies of 230 and 2000 keV in C60 and K3C60 crystals was calculated by the Monte Carlo method. Ion channeling was shown to occur in the 〈100〉 and 〈111〉 directions. The main parameters characterizing channe
Publikováno v:
Physics and Chemistry of the Earth, Part C: Solar, Terrestrial & Planetary Science. 25:587-590
This paper concerns with the problem of creation of a database of reliable atomic data used in many applications, in particular, in aeronomy and astrophysics. To solve this problem, a group of authors performed an extensive amount of compiled and ana
Autor:
R. N. Il’in, V. I. Sakharov, D. V. Yanovskii, V. V. Afrosimov, S. F. Karmanenko, Alexander A. Semenov, I. T. Serenkov
Publikováno v:
Physics of the Solid State. 41:527-533
The initial stages in the formation and growth of yttrium-barium cuprate films have been studied in the course of magnetron sputtering of a ceramic target by combining medium-energy-ion scattering (MEIS) and scanning-electron microscopy. The growth m
Autor:
V. I. Sakharov, R. N. Il’in, V. V. Afrosimov, T. L. Makarova, I. B. Zakharova, I. T. Serenkov
Publikováno v:
Physics of the Solid State. 44:503-505
This paper reports on a study of films of fullerenes and their halogen compounds, deposited on mica and silicon, by medium-energy ion scattering (MEIS). The film thickness nonuniformity was determined. A considerable increase in the halogen concentra
Autor:
Yu V Likholetov, R. A. Chakalov, Orest Vendik, V. Yu. Davydov, A.B. Kozyrev, I T Serenkov, G O Dzjuba, R N Il'in, S. F. Karmanenko, M. V. Belousov, K F Njakshev
Publikováno v:
Superconductor Science and Technology. 6:23-29
The structure and crystallographic orientation of YBa2Cu3O7- delta films on BaxSr1-xTiO3/MgO heteroepitaxial layers were investigated by the conventional methods of electron diffraction, electron microscopy and by specific methods of Raman scattering
Publikováno v:
Physics of the Solid State. 42:406-408
The growth of ultrathin (1.7–7.3 nm) YBa2Cu3O7−x films on the SrTiO3(100) substrate is investigated by the mean-energy ion scattering technique. It is found that the growth of islands proceeds according to the two-dimensional and three-dimensiona
Autor:
R. N. Il’in, A. V. Tumarkin, V. I. Sakharov, E. K. Gol’man, D. A. Plotkin, M. N. Panov, S. V. Razumov, I. T. Serenkov, V. V. Afrosimov
Publikováno v:
Technical Physics Letters. 24:41-42
Superconducting YBa2Cu3O7−x films were prepared by magnetron sputtering on Al2O3 single crystals with a CeO2 sublayer. Scattering of moderate-energy ions and x-ray diffraction were used to show that the films exhibit good single-crystal properties