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Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 26, Iss 4, Pp 197-204 (2003)
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS st
Externí odkaz:
https://doaj.org/article/e95310f8ec284504be0dc6391bb54747
Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 187-199 (2001)
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-
Externí odkaz:
https://doaj.org/article/a78955e5dcbd465c9d9ca7d9dc40db4e
Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 3, Pp 137-144 (2000)
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered clo
Externí odkaz:
https://doaj.org/article/2ddc7b046423457da38d5efc498ed848
Autor:
A. Bouhdada, R. Marrakh
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 2, Pp 61-73 (2000)
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n‾ LDD region. Calculating the surface potentia
Externí odkaz:
https://doaj.org/article/e9b0509653ea4707be826d092b7c2538
Publikováno v:
Microelectronics Reliability. 44:223-228
We propose to model the spectral response of Zn(Mg)BeSe p–i–n photodetectors in order to understand their behavior and improve their performances such as maximum response and rejection rate. With this aim in view, we carry out a preliminary model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8bfdc6a2e2fa98534f0eaa7f8b13bb
https://doi.org/10.1016/s0026-2714(03)00221-x
https://doi.org/10.1016/s0026-2714(03)00221-x
Autor:
A. Bouhdada, R. Marrakh
Publikováno v:
Microelectronics Journal. 31:91-94
We propose a model to determine the surface potential evolution for a stressed submicronic MOSFET. Stress conditions are chosen in a manner so that the interface states generated by the hot electron injection at the Si–SiO 2 interface are dominant.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1b0eb3dbb767a43edac791895dc285
https://doi.org/10.1016/s0026-2692(99)00092-0
https://doi.org/10.1016/s0026-2692(99)00092-0
Publikováno v:
Microelectronics Journal. 30:19-22
The increase of the MOS integration scale entails the presence of the strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO2 interface and in the oxide lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbe42330fce37d596e48284009b0e98
https://doi.org/10.1016/s0026-2692(98)00073-1
https://doi.org/10.1016/s0026-2692(98)00073-1
Autor:
A. Bouhdada, R. Marrakh
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
Hot-carrier injection is observed increasingly to degrade the I-V characteristics with the scaling of MOS transistors. For the lightly doped drain (LDD) MOS transistor the injection of hot carriers, caused by the high electric field in the MOS struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e4ad209f9fd7c56ca806e790c7f24b
https://doi.org/10.1109/miel.2002.1003300
https://doi.org/10.1109/miel.2002.1003300
Autor:
A. Bouhdada, R. Marrakh
Publikováno v:
ICM 2001 Proceedings. The 13th International Conference on Microelectronics..
A threshold voltage model for stressed submicron NMOS transistors is proposed. Stress conditions are chosen in a manner such that the interface states generated by hot electron injection at the Si-SiO/sub 2/ interface are dominant. The stress-generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23fa40082a9393f9fe733006bcf0e27a
https://doi.org/10.1109/icm.2001.997478
https://doi.org/10.1109/icm.2001.997478