Zobrazeno 1 - 10
of 42
pro vyhledávání: '"R M Balagula"'
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Record high spatial coherence values up to 87λ (130λ) in experiment (theory) were reported for polarized emission of surface plasmon-phonon polaritons excited in shallow surface relief n-GaN grating. Unusual independence of quality factor and depen
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Simple analytical model for description of THz time-domain spectroscopy data was found investigating high-frequency characteristics of semi-insulating substrate with thin conductive layer. Developed method was validated on commercial AlGaN/GaN high e
Publikováno v:
Optics express. 29(9)
Dispersion characteristics of hybrid surface plasmon-phonon-polaritons (SPPhPs) on the air/polar semiconductor interface were investigated by means of shallow surface relief grating using emission spectroscopy methods. A set of grating structures wit
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 106:85-89
The kinetics of the photoinduced mid-infrared intraband hole absorption after the short interband excitation pulse has been studied in an dense array of surfactant-mediated Ge/Si(001) quantum dots. Absorption decay curves reveal two processes charact
Autor:
Justinas Jorudas, Ignas Grigelionis, R M Balagula, Natalia V. Alexeeva, Liudvikas Subačius, Irmantas Kašalynas, Daniil Pashnev, V. V. Korotyeyev, Gintaras Valušis, Vytautas Janonis, Linas Minkevičius
Publikováno v:
Terahertz Emitters, Receivers, and Applications XI.
We report three approaches to development of electrically-pumped THz emitters based on III-Nitride structures. The first approach entails the investigation of two-dimensional (2D) plasmons in grating-gated AlGaN/GaN heterostructures performed at temp
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
Autor:
R M Balagula, Fumitaro Ishikawa, Irina Buyanova, Mitsuki Yukimune, Mattias Jansson, Jan Eric Stehr, Weimin Chen
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-
Autor:
J E, Stehr, R M, Balagula, M, Jansson, M, Yukimune, R, Fujiwara, F, Ishikawa, W M, Chen, I A, Buyanova
Publikováno v:
Nanotechnology. 31(6)
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ∼1 μm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect
Autor:
Leon Shterengas, Maxim Ya. Vinnichenko, D. A. Firsov, Leonid E. Vorobjev, I S Makhov, R M Balagula, Gregory Belenky
Publikováno v:
Superlattices and Microstructures. 109:743-749
Time dependencies of interband photoluminescence are studied in InGaAsSb/AlGaAsSb quantum well structures with various barrier materials and quantum well widths. The experimentally determined dependencies of photoluminescence intensity on the optical
Publikováno v:
Superlattices and Microstructures. 107:228-233
We study the temperature dependencies of equilibrium and photo-induced infrared absorption in GeSi/Si quantum dots in a wide spectral range. We show that, in spite of the large valence band offset at GeSi/Si interface and strong confinement for holes
Autor:
C.A. Duque, V. Akimov, D. A. Firsov, M. Ya. Vinnichenko, Leonid E. Vorobjev, R M Balagula, V. Tulupenko
Publikováno v:
Optical Materials. 66:160-165
An experimental study of the intersubband light absorption by the 100-period GaAs/Al 0.25 Ga 0.75 As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption p