Zobrazeno 1 - 10
of 90
pro vyhledávání: '"R Losch"'
Autor:
Fred J Burpo, Stephen F. Bartolucci, Anchor R. Losch, Deryn D. Chu, Alexander N. Mitropoulos, Enoch A. Nagelli, Joshua P. McClure, David R. Baker
Publikováno v:
MRS Communications. 9:280-287
Here we present the synthesis of porous platinum–palladium macrobeams templated from high aspect ratio Magnus’ salt needle derivatives. The combination of [PtCl4]2− and/or [PdCl4]2− with [Pt(NH3)4]2+ ions results in salt needles ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75addf117e17139172b2c9f27fb0ebad
https://doi.org/10.1557/mrc.2018.217
https://doi.org/10.1557/mrc.2018.217
Autor:
Lance Richardson, Anchor R. Losch, Deryn D. Chu, Sean F. O'Brien, Greg T Forcherio, Brittany R Aikin, David R. Baker, Enoch A. Nagelli, Stephen J. Winter, J. Kenneth Wickiser, Alvin R. Burns, F. John Burpo, Kelsey M Healy, Mason H Remondelli, Joshua P. McClure, Stephen F. Bartolucci, Alexander N. Mitropoulos, Jack K. Bui
Publikováno v:
Journal of visualized experiments : JoVE. (159)
The synthesis of high surface area porous noble metal nanomaterials generally relies on time consuming coalescence of pre-formed nanoparticles, followed by rinsing and supercritical drying steps, often resulting in mechanically fragile materials. Her
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69bb898fd70d287f22c5b3f43118d104
https://pubmed.ncbi.nlm.nih.gov/32478752
https://pubmed.ncbi.nlm.nih.gov/32478752
Autor:
F. John Burpo, Deryn D. Chu, Enoch A. Nagelli, David R. Baker, Anchor R. Losch, Stephen F. Bartolucci, Gregory T. Forcherio, Joshua P. McClure, Jack K. Bui
Publikováno v:
Catalysts
Volume 9
Issue 8
Catalysts, Vol 9, Iss 8, p 662 (2019)
Volume 9
Issue 8
Catalysts, Vol 9, Iss 8, p 662 (2019)
Platinum nanomaterials provide an excellent catalytic activity for diverse applications and given its high cost, platinum alloys and bi-metallic nanomaterials with transition metals are appealing for low cost and catalytic specificity. Here the synth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8691afbaabda6fd5d195553377940b98
Autor:
Frank Fuchs, R. Losch, Stefan Hugger, Borislav Hinkov, Joachim Wagner, Rolf Aidam, Wolfgang Bronner, Quankui Yang, M. Kinzer
Publikováno v:
physica status solidi c. 9:302-305
We investigated the beam-steering phenomenon of quantum-cascade lasers emitting at ∼7.8 µm wavelength, operated in pulsed mode at heat sink temperatures around room-temperature. The lasers have a dimension of 12 µm × 1500 µm. The observed beam-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4853baa11d860d931d94a5eb3925def4
https://doi.org/10.1002/pssc.201100248
https://doi.org/10.1002/pssc.201100248
Autor:
H. Walcher, R. Losch, Michael Schlechtweg, R. E. Makon, Volker Hurm, Rachid Driad, J. Rosenzweig
Publikováno v:
IEEE Transactions on Electron Devices. 58:2604-2609
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet). Due to its high speed and high breakdown voltage, the InP double-heterojunction bipolar transistor (DHBT) technology is particularly suited for sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b87e3b0a9f882cb018bfbe5655fcf4e0
https://doi.org/10.1109/ted.2011.2157927
https://doi.org/10.1109/ted.2011.2157927
Publikováno v:
Solid-State Electronics. 54:1343-1348
We report the crystallographic orientation effects in InP-based heterojunction bipolar transistors (HBTs). The DC and RF characteristics of DHBTs fabricated on the same wafer were found to be dependent on the emitter orientation. Self-aligned InP/InG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a40c0180f8e100f3817827fdc211c8
https://doi.org/10.1016/j.sse.2010.04.008
https://doi.org/10.1016/j.sse.2010.04.008
Publikováno v:
Journal of Crystal Growth. :1001-1004
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b886b214cc5c1a1c81eb0539f8ce8228
https://doi.org/10.1016/j.jcrysgro.2006.11.243
https://doi.org/10.1016/j.jcrysgro.2006.11.243
Publikováno v:
physica status solidi c. 3:456-460
In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from material growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b949d5d4c45311dc76f644d5815605
https://doi.org/10.1002/pssc.200564102
https://doi.org/10.1002/pssc.200564102
Publikováno v:
IEEE Photonics Technology Letters. 18:655-657
We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41d1eb47e6366f9ff313ac54a1c1b4bb
https://doi.org/10.1109/lpt.2006.870124
https://doi.org/10.1109/lpt.2006.870124
Autor:
C. Breitlow, G. Nachtwei, L. Bliek, H. Nickel, W Schlapp, L. Bartholomäus, M. Blöcker, A. Linke, R Losch, P. Svoboda, M. Cukr, Thomas Weimann, F. J. Ahlers
Publikováno v:
Semiconductor Science and Technology. 11:89-95
We investigated the local potential distribution over gated double-bridge structures patterned on GaAs/GaAlAs heterostructures. The current and potential distribution over the gated double-bridge devices was measured for several sets of filling facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31d6286a50c190e4668b36c800642c8
https://doi.org/10.1088/0268-1242/11/1/020
https://doi.org/10.1088/0268-1242/11/1/020