Zobrazeno 1 - 10
of 25
pro vyhledávání: '"R L. Inglebert"'
Publikováno v:
Microelectronic Engineering. 86:1089-1092
Convective-capillary force assembly (CFA) [1] and the capillary separation effect [2] are combined in order to fabricate Au colloidal dimers with modulated edge-to-edge inter-particle spacings. A study of the assembly process demonstrates the effect
Autor:
Cedric Monget, Patrick Schiavone, Olivier Joubert, Jean-Marc Temerson, Michael P. Nault, Olivier Toublan, Alain Prola, R. L. Inglebert, David Fuard, Timothy W. Weidman, Nikolaos Bekiaris
Publikováno v:
SPIE Proceedings.
New photoresists and processes are required for sub 0.15 micrometers design rules and currently an important effort is on- going for single layer resists optimization at 193 nm. Top surface imaging can be an interesting alternative approach. An all d
Autor:
Timothy W. Weidman, F. Cormont, Carol Y. Lee, Gilles R. Amblard, Olivier Joubert, John W. Yang, R. L. Inglebert, Dian Sugiarto, Cedric Monget
Publikováno v:
SPIE Proceedings.
Plasma polymerized methylsilane resist films (PPMS) have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material (called PPMSO), allowing dry development by selective etc
Autor:
R L. Inglebert, P. Boumati, F. Sommer, C. Chassard-Bouchaud, F. Escaig, S A. Mountfort, A E. Oakley
Publikováno v:
Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society.
Trials have been carried out to establish appropriate standards for quantitative biological microanalysis using SIMS. This feasibility study has demonstrated that gelatin and ion exchange resin microbeads embedded in epoxy resin could be homogenously
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2137
Anisotropic etching of silicon gates is a key step in today’s integrated circuit fabrication. For sub-100 nm gate dimensions, one of the main issues is to precisely control the shape of the etched feature. This requires a detailed knowledge of the
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2534
Plasma polymerized methylsilane (PPMS) films are promising photosensitive layers for 248 and 193 nm lithography applications. These a-Si1−xCx:H films are deposited in a low power plasma of methylsilane gas using a commercial tool. The effect of sub
Publikováno v:
Surface Science. 140:197-206
Some FeAl alloys, and pure Al and Fe samples, are sputtered in ultrahigh vacuum with Ar+ ions between 4 and 15 keV. As previously observed with CuAl alloys, the intensity of the principal Al Auger peak at 63.5 eV is a parabolic function of the
Autor:
J.-F. Hennequin, R.-L. Inglebert
Publikováno v:
International Journal of Mass Spectrometry and Ion Physics. 26:131-135
The acceptance of a quadrupole mass filter is studied by means of a small alkali ion source movable under vacuum. Experimental results are in agreement with Dawson's theoretical calculations.
Publikováno v:
Le Journal de Physique Colloques. 45:C2-139
A comparative study on Auger electron and secondary ion emissions from Fe-Al and Cu-Al alloys bombarded in ultrahigh vacuum by Ar ions gives a new proof that two mechanisms may give rise to the ionization of sputtered particles : a surface excitation
Autor:
R.-L. Inglebert, J.-F. Hennequin
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1980, 15 (9), pp.1489-1500. ⟨10.1051/rphysap:019800015090148900⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1980, 15 (9), pp.1489-1500. ⟨10.1051/rphysap:019800015090148900⟩
A partir des résultats expérimentaux obtenus pour un faisceau ionique fin, la transmission globale d'un quadrupôle est calculée pour un faisceau largement ouvert d'ions monocinétiques issus d'un objet ponctuel, réel ou virtuel. La transmission