Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R K, Lowry"'
Publikováno v:
Journal of Non-Crystalline Solids. :835-839
We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374fde790b6d1d5622c09edbdaca211b
https://doi.org/10.1016/s0022-3093(99)00851-0
https://doi.org/10.1016/s0022-3093(99)00851-0
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1534-1543
We evaluate the hole trapping response of twenty-two oxides subjected to twenty-two different sets of processing parameters. The oxides were prepared in three different facilities, the Harris Semiconductor-Intersil Palm Bay facility, the former Naval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b06543e3ffed77ed93ba6dc13d1480
https://doi.org/10.1109/23.819118
https://doi.org/10.1109/23.819118
Autor:
David A. DeCrosta, Patrick M. Lenahan, B. Czagas, C. Gamlen, C. Frye, H. L. Evans, R. K. Lowry, Robert T. Fuller, M. Morrison
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2565-2571
A study has been conducted of the effects of deposition conditions on the radiation hardness of borophosphosilicate glass (BPSG). Films deposited by two common deposition techniques were evaluated using gamma cell testing, electron spin resonance (ES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86f79b64167c6137591845a8ca8d6030
https://doi.org/10.1109/23.556837
https://doi.org/10.1109/23.556837
Publikováno v:
Journal of Applied Physics. 76:2872-2880
Using electron‐spin resonance (ESR), we demonstrate that several E’ variant precursors exist in a variety of technologically significant thermally grown thin SiO2 films on Si. The E’ variants include two varieties with the ubiquitous Eγ’ lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201069bd2f8e6def87cc12294ebf04cb
https://doi.org/10.1063/1.358428
https://doi.org/10.1063/1.358428
Autor:
David J. Hydes, A. J. Pomroy, H. Edmunds, R. K. Lowry, Roger Proctor, T. J. Moffat, I. R. Joint, K. R. Dyer, John Eric Jones, Duncan A. Purdie, M. J. Howarth, W. Van Leussen
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences. 343:383-403
Seasonal variations dominate many processes in continental shelf seas. A comprehensive coherent inter-disciplinary data set for one seasonal cycle was obtained by repeating the same cruise track in the southern North Sea at monthly intervals from Aug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31672afa87643e8fdb8598a88b27488
https://doi.org/10.1098/rsta.1993.0054
https://doi.org/10.1098/rsta.1993.0054
Autor:
R. K. Lowry, R. C. Kullberg
Publikováno v:
SPIE Proceedings.
The primary cause of corrosion, stiction or other failure mechanisms within hermetically sealed enclosures has historically been viewed as due to increases in internal moisture concentrations. It has historically been postulated that the primary sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa53ef3a91bfe5fc293bb35314a57dae
https://doi.org/10.1117/12.807970
https://doi.org/10.1117/12.807970
Publikováno v:
Journal of Applied Physics. 76:8186-8188
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bcfe5dbdda0c50ef1c6a29286f83a83
https://doi.org/10.1063/1.357871
https://doi.org/10.1063/1.357871
Publikováno v:
Applied Physics Letters. 65:2281-2283
We demonstrate that at least two varieties of E’ defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E’γp. We find that EP defect capture cross sections exceed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a36590cd2b27456298bd055d813a36
https://doi.org/10.1063/1.112718
https://doi.org/10.1063/1.112718
Autor:
A.Y. Kang, R. Weimer, R. K. Lowry, J. P. Campbell, D. Woodbury, Patrick M. Lenahan, S.T. Liu, J.J. Mele
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357f37114316562a10e85c6957f5db28
https://doi.org/10.1109/relphy.2001.922894
https://doi.org/10.1109/relphy.2001.922894